參數(shù)資料
型號(hào): MA330013
廠商: Microchip Technology
文件頁(yè)數(shù): 179/199頁(yè)
文件大小: 0K
描述: MODULE PLUG-IN DSPIC33 100TQFP
標(biāo)準(zhǔn)包裝: 1
附件類型: 插拔式模塊(PIM)- dsPIC33FJ256MC710
適用于相關(guān)產(chǎn)品: Explorer 16(DM240001 或 DM240002)
產(chǎn)品目錄頁(yè)面: 658 (CN2011-ZH PDF)
配用: DM330023-ND - BOARD DEV DSPICDEM MCHV
相關(guān)產(chǎn)品: DSPIC33FJ64MC710T-I/PT-ND - IC DSPIC MCU/DSP 64K 100TQFP
DSPIC33FJ64MC710T-I/PF-ND - IC DSPIC MCU/DSP 64K 100TQFP
DSPIC33FJ64MC510T-I/PT-ND - IC DSPIC MCU/DSP 64K 100TQFP
DSPIC33FJ64MC510T-I/PF-ND - IC DSPIC MCU/DSP 64K 100TQFP
DSPIC33FJ256MC510T-I/PT-ND - IC DSPIC MCU/DSP 256K 100TQFP
DSPIC33FJ256MC510T-I/PF-ND - IC DSPIC MCU/DSP 256K 100TQFP
DSPIC33FJ128MC710T-I/PT-ND - IC DSPIC MCU/DSP 128K 100TQFP
DSPIC33FJ128MC710T-I/PF-ND - IC DSPIC MCU/DSP 128K 100TQFP
DSPIC33FJ128MC510T-I/PT-ND - IC DSPIC MCU/DSP 128K 100TQFP
DSPIC33FJ128MC510T-I/PF-ND - IC DSPIC MCU/DSP 128K 100TQFP
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dsPIC33F
DS70165E-page 78
Preliminary
2007 Microchip Technology Inc.
4.2
RTSP Operation
The dsPIC33F Flash program memory array is
organized into rows of 64 instructions or 192 bytes.
RTSP allows the user to erase a page of memory,
which consists of eight rows (512 instructions) at a
time, and to program one row or one word at a time.
shows typical erase and programming times. The 8-
row erase pages and single row write rows are edge-
aligned, from the beginning of program memory, on
boundaries of 1536 bytes and 192 bytes, respectively.
The program memory implements holding buffers that
can contain 64 instructions of programming data. Prior
to the actual programming operation, the write data
must be loaded into the buffers in sequential order. The
instruction words loaded must always be from a group
of 64 boundary.
The basic sequence for RTSP programming is to set up
a Table Pointer, then do a series of TBLWT instructions
to load the buffers. Programming is performed by set-
ting the control bits in the NVMCON register. A total of
64 TBLWTL and TBLWTH instructions are required to
load the instructions.
All of the table write operations are single-word writes
(two instruction cycles) because only the buffers are
written.
A
programming
cycle
is
required
for
programming each row.
4.3
Control Registers
There are two SFRs used to read and write the
program Flash memory: NVMCON and NVMKEY.
The NVMCON register (Register 4-1) controls which
blocks are to be erased, which memory type is to be
programmed and the start of the programming cycle.
NVMKEY is a write-only register that is used for write
protection. To start a programming or erase sequence,
the user must consecutively write 55h and AAh to the
NVMKEY register. Refer to Section 4.4 “Programming
Operations” for further details.
4.4
Programming Operations
A complete programming sequence is necessary for
programming or erasing the internal Flash in RTSP
mode. A programming operation is nominally 4 ms in
duration and the processor stalls (waits) until the oper-
ation is finished. Setting the WR bit (NVMCON<15>)
starts the operation, and the WR bit is automatically
cleared when the operation is finished.
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