參數(shù)資料
型號(hào): M5M4V64S20ATP-10L
廠商: Mitsubishi Electric Corporation
英文描述: 64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM
中文描述: 64M號(hào)(4銀行甲4194304字× 4位)同步DRAM
文件頁(yè)數(shù): 31/48頁(yè)
文件大?。?/td> 1097K
代理商: M5M4V64S20ATP-10L
M5M4V64S20ATP-8, -10, -12
Jan'97
Preliminary
MITSUBISHI LSIs
64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM
MITSUBISHI ELECTRIC
SDRAM (Rev.0.2)
Burst Write (multi bank) @BL=4
/CS
/RAS
/CAS
/WE
CKE
DQM
A0-9
A10
A11
BA0,1
DQ
X
X
X
0
Y
0
1
D0
D0
D0
D0
X
X
0
Y
0
D0
D0
D0
D0
ACT#0
WRITE#0
PRE#0
ACT#0
WRITE#0
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
tRCD
tRAS
tWR
tRP
tRC
tRCD
D1
D1
D1
D1
X
X
X
1
tRRD
Y
tWR
0
X
1
X
X
X
2
tRRD
ACT#1
WRITE#1
PRE#1
ACT#2
CLK
31
Italic parameter
indicates minimum case
相關(guān)PDF資料
PDF描述
M5M4V64S20ATP-12 64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM
M5M4V64S20ATP-8 64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM
M5M4V64S20ATP-8A 64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM
M5M4V64S20ATP-8L 64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM
M5M51008KR-10L 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M5M4V64S20ATP-12 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM
M5M4V64S20ATP-8 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM
M5M4V64S20ATP-8A 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM
M5M4V64S20ATP-8L 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM
M5M4V64S30ATP-10 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM