參數(shù)資料
型號(hào): M5M4V64S20ATP-10L
廠商: Mitsubishi Electric Corporation
英文描述: 64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM
中文描述: 64M號(hào)(4銀行甲4194304字× 4位)同步DRAM
文件頁(yè)數(shù): 2/48頁(yè)
文件大小: 1097K
代理商: M5M4V64S20ATP-10L
M5M4V64S20ATP-8, -10, -12
Jan'97
Preliminary
MITSUBISHI LSIs
64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM
MITSUBISHI ELECTRIC
SDRAM (Rev.0.2)
BLOCK DIAGRAM
Address Buffer
A0-11 BA0,1
Control Signal Buffer
/CS /RAS /CAS /WE DQM
CLK
CKE
Clock Buffer
Memory Array
Bank #0
Control Circuitry
I/O Buffer
DQ0-7(0-3)
Mode
Register
Memory Array
Bank #1
Memory Array
Bank #2
Memory Array
Bank #3
Type Designation Code
M 5M 4 V 64 S 3 0 A TP - 8
Cycle Time (min.) 8: 8ns, 10: 10ns, 12: 12ns
Package Type TP: TSOP(II)
Process Generation
Function 0: Random Column, 1: 2N-rule
Organization 2n 2: x4, 3: x8, 4: x16
Synchronous DRAM
Density 64:64M bits
Interface S: SSTL, V:LVTTL
Memory Style (DRAM)
Use, Recommended Operating Conditions, etc
Mitsubishi Main Designation
This rule is applied to only Synchronous DRAM family.
2
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M5M4V64S20ATP-12 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM
M5M4V64S20ATP-8 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM
M5M4V64S20ATP-8A 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM
M5M4V64S20ATP-8L 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM
M5M4V64S30ATP-10 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM