參數(shù)資料
型號(hào)： M58WR064EB85ZB6T
廠商： NUMONYX
元件分類(lèi)： PROM
英文描述： 4M X 16 FLASH 1.8V PROM, 85 ns, PBGA56
封裝： 7.70 X 9 MM, 0.75 MM PITCH, VFBGA-56
文件頁(yè)數(shù)： 71/81頁(yè)
文件大小： 539K
代理商： M58WR064EB85ZB6T
73/81
M58WR064ET, M58WR064EB
Figure 27. Enhanced Factory Program Flowchart
Write 30h
Address WA1
AI06160
Start
Read Status
Register
YES
NO
SR0 = 0?
End
Write D0h
Address WA1
Write PD1
Address WA1
Write PD2
Address WA2(1)
YES
NO
Read Status
Register
Write PDn
Address WAn(1)
YES
NO
Read Status
Register
Read Status
Register
NO
Write PD1
Address WA1(1)
Write PDn
Address WAn(1)
NO
Read Status
Register
Write FFFFh
Address
Block WA1
SETUP PHASE
VERIFY PHASE
SR0 = 0?
Read Status
Register
YES
NO
SR0 = 0?
Write FFFFh
Address Block WA1
SR7 = 0?
YES
NO
Check SR4, SR3
and SR1 for program,
VPP and Lock Errors
Exit
Read Status
Register
NO
Write PD2
Address WA2(1)
SR0 = 0?
YES
Read Status
Register
SR7 = 1?
Check Status
Register for Errors
YES
NO
YES
Note 1. Address can remain Starting Address WA1 or be incremented.
PROGRAM PHASE
EXIT PHASE
=/
/=
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PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M58WR064EBZB 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
M58WR064ET 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
M58WR064ET10ZB6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
M58WR064ET70ZB6T 功能描述:閃存 64M (4Mx16) 70ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M58WR064ET80ZB6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
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