參數(shù)資料
型號(hào)： M58WR064EB85ZB6T
廠商： NUMONYX
元件分類： PROM
英文描述： 4M X 16 FLASH 1.8V PROM, 85 ns, PBGA56
封裝： 7.70 X 9 MM, 0.75 MM PITCH, VFBGA-56
文件頁(yè)數(shù)： 44/81頁(yè)
文件大?。?/td> 539K
代理商： M58WR064EB85ZB6T
49/81
M58WR064ET, M58WR064EB
Table 23. Write AC Characteristics, Chip Enable Controlled
Note: 1. Sampled only, not 100% tested.
2. tWHEL has the values shown when reading in the targeted bank. System designers should take this into account and may insert a
software No-Op instruction to delay the first read in the same bank after issuing a command. If it is a Read Array operation in a
different bank tWHEL is 0ns.
3. To be characterized.
Symbol
Alt
Parameter
M58WR064E
Unit
70
85
100
C
hip
E
nable
Con
trolled
T
iming
s
tAVAV
tWC
Address Valid to Next Address Valid
Min
70(3)
85
100
ns
tAVEH
tWC
Address Valid to Chip Enable High
Min
45(3)
50
ns
tAVLH
Address Valid to Latch Enable High
Min
10
ns
tDVEH
tDS
Data Valid to Write Enable High
Min
45(3)
50
ns
tEHAX
tAH
Chip Enable High to Address Transition
Min
0
ns
tEHDX
tDH
Chip Enable High to Input Transition
Min
0
ns
tEHEL
tWPH
Chip Enable High to Chip Enable Low
Min
25
ns
tEHGL
Chip Enable High to Output Enable Low
Min
0
ns
tEHWH
tCH
Chip Enable High to Write Enable High
Min
0
ns
tELKV
Chip Enable Low to Clock Valid
Min
9
ns
tELEH
tWP
Chip Enable Low to Chip Enable High
Min
45(3)
50
ns
tELLH
Chip Enable Low to Latch Enable High
Min
10
ns
tELQV
Chip Enable Low to Output Valid
Min
70(3)
85
100
ns
tGHEL
Output Enable High to Chip Enable Low
Min
20
ns
tLHAX
Latch Enable High to Address Transition
Min
10
ns
tLLLH
Latch Enable Pulse Width
Min
10
ns
tWHEL
(2)
Write Enable High to Chip Enable Low
Min
25(3)
25
ns
tWHQV
Write Enable High to Output Valid
Min
95
110
125
ns
tWLEL
tCS
Write Enable Low to Chip Enable Low
Min
0
ns
Prot
ection
T
iming
s
tEHVPL
Chip Enable High to VPP Low
Min
200
ns
tEHWPL
Chip Enable High to Write Protect Low
Min
200
ns
tQVVPL
Output (Status Register) Valid to VPP Low
Min
0
ns
tQVWPL
Output (Status Register) Valid to Write Protect
Low
Min
0
ns
tVPHEH
tVPS
VPP High to Chip Enable High
Min
200
ns
tWPHEH
Write Protect High to Chip Enable High
Min
200
ns
相關(guān)PDF資料
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M58WR064EBZB 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
M58WR064ET 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
M58WR064ET10ZB6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
M58WR064ET70ZB6T 功能描述:閃存 64M (4Mx16) 70ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M58WR064ET80ZB6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
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