參數(shù)資料
型號(hào)： M58LW064BT
廠商： 意法半導(dǎo)體
英文描述： 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories
中文描述： 64兆位x16和x16/x32，塊擦除低壓閃存
文件頁數(shù)： 9/53頁
文件大?。?/td> 319K
代理商： M58LW064BT
9/53
M58LW064A, M58LW064B
Table 4. Synchronous Burst Read Operations
(1)
Note: 1. X = Don’t Care, V
IL
or V
IH
.
2.
need to check with designers for various X and clock _/ definitions
Table 5. Asynchronous Read Electronic Signature Operation
Note: 1. For M58LW064B, A1 = Dont’Care
Table 6. M58LW064A CFI Block Protection Status Query Operation
(1)
Note: 1. X = Dont’Care, V
IL
or V
IH
.
Table 7. M58LW064B CFI Block Protection Status Query Operation
(1)
Note: 1. X = Dont’Care, V
IL
or V
IH
.
Operation
E
G
RP
K
L
B
A1-A22
DQ0-DQ31
Address Latch
V
IL
V
IH
V
IH
_/
V
IL
V
IH
Addess Input
Burst Read
V
IL
V
IL
V
IH
_/
V
IH
V
IH
Data Output
Burst Read Suspend
V
IL
V
IH
V
IH
X
V
IH
V
IH
High Z
Burst Read Interrupt (E)
V
IH
X
V
IH
X
V
IH
V
IH
High Z
Burst Read Interrupt (RP)
X
X
V
IL
X
X
X
High Z
Burst Read Resume
V
IL
V
IL
V
IH
_/
V
IH
V
IL
Data Output
Burst Address Advance
V
IL
V
IH
V
IH
_/
V
IH
V
IL
High Z
No Data Output Burst Address
Advance with valid Data Output
V
IL
V
IL
V
IH
_/
V
IH
V
IL
Data Output
Code
Device
E
G
W
A22-A1
A22-A2
DQ7-DQ0
Manufacturer
All
V
IL
V
IL
V
IH
00000h
00000h
20h
Device
M58LW064A
V
IL
V
IL
V
IH
00001h
–
17h
M58LW064B
(1)
V
IL
V
IL
V
IH
–
00001h
14h
Block Status
E
G
W
A1
A2
A3-A16
A17-A22
DQ7-DQ0
Protected
V
IL
V
IL
V
IH
V
IH
V
IH
X
Block Address
01h
Unprotected
V
IL
V
IL
V
IH
V
IH
V
IH
X
Block Address
00h
Block Status
E
G
W
A1
A2
A3
A4-A16
A17-A22
DQ7-DQ0
Protected
V
IL
V
IL
V
IH
X
V
IH
V
IH
X
Block Address
01h
Unprotected
V
IL
V
IL
V
IH
X
V
IH
V
IH
X
Block Address
00h
相關(guān)PDF資料
PDF描述
M58LW064C 64 Mbit (4Mb x16, Uniform Block, Burst) 3V Supply Flash Memory
M58LW064C110N1T 64 Mbit (4Mb x16, Uniform Block, Burst) 3V Supply Flash Memory
M58LW064BZA 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories
M58LW064A150NH6T 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories
M58LW064B150NH6T 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M58LW064BZA 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories
M58LW064C 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x16, Uniform Block, Burst) 3V Supply Flash Memory
M58LW064C110N1T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x16, Uniform Block, Burst) 3V Supply Flash Memory
M58LW064C110N6 功能描述:閃存 8Mx8 or 4Mx16 110ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M58LW064C110N6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x16, Uniform Block, Burst) 3V Supply Flash Memory
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