- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄359082 > M58LW064BT (意法半導(dǎo)體) 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories PDF資料下載
參數(shù)資料
| 型號： | M58LW064BT |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
| 中文描述： | 64兆位x16和x16/x32，塊擦除低壓閃存 |
| 文件頁數(shù)： | 16/53頁 |
| 文件大?。?/td> | 319K |
| 代理商： | M58LW064BT |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁當(dāng)前第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁
M58LW064A, M58LW064B
16/53
Table 10. Burst Configuration Register
(1)
Note: 1. The BCR defines both the read mode and the burst configuration.
2. Synchronous burst length is defined as Word or Double-Word, the data bus width depends only on the WORD input.
Asynchronous Page read is two Words or one Double-Word.
3. A burst length of 8 is not available for x32 organisation.
4. At F
K
> 50MHz when X-Latency = 10 or 12, Y-Latency = 2 independent of the value of M9.
At F
K
= 66MHz when X-Lantency = 14 or 16, Y-Latency = 2 indepedent of the value of M9.
5. Latency 7 valid only for continuous burst. Otherwisw Latency = 8.
6. Latency 10 valid only for continuous burst. Otherwisw Latency = 12.
7. Latency 11 valid only for continuous burst. Otherwisw Latency = 12.
8. Latency 14 valid only for continuous burst. Otherwisw Latency = 16.
BCR mode bit
Description
Value
Description
M15
Read Select
0
Synchronous Burst Read
1
Asynchronous Read
M14-M11
X-Latency
(4)
0001
Reserved
0010
7, only for F
K
= 33MHz
(5)
0011
8, only for F
K
= 33MHz
0100
9, only for F
K
= 33MHz
0101
10, only for F
K
= 50MHz
(6)
0110
11, only for F
K
= 50MHz
(7)
1001
12, only for F
K
= 50MHz
1010
13, only for F
K
= 50MHz
1011
14, only for F
K
= 66MHz
(8)
1101
16, only for F
K
= 66MHz
M9
Y-Latency
(4)
0
One Burst Clock cycle
1
Two Burst Clock cycles
M8
Valid Data Ready
0
R valid Low during valid Burst Clock edge
1
R valid Low one data cycle before valid Burst Clock edge
M7
Burst Type
0
Interleaved
1
Sequential
M6
Valid Clock Edge
0
Falling Burst Clock edge
1
Rising Burst Clock edge
M3
Asynchronous
0
Random Read
1
Latch Enable Controlled Read
M2-M0
Burst Length
(2)
100
1 Word or Double-Word
101
2 Words or Double-Words
001
4 Words or Double-Words
010
8 Words or Double-Words
(3)
111
Continuous
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M58LW064C | 64 Mbit (4Mb x16, Uniform Block, Burst) 3V Supply Flash Memory |
| M58LW064C110N1T | 64 Mbit (4Mb x16, Uniform Block, Burst) 3V Supply Flash Memory |
| M58LW064BZA | 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
| M58LW064A150NH6T | 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
| M58LW064B150NH6T | 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58LW064BZA | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |
| M58LW064C | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x16, Uniform Block, Burst) 3V Supply Flash Memory |
| M58LW064C110N1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x16, Uniform Block, Burst) 3V Supply Flash Memory |
| M58LW064C110N6 | 功能描述:閃存 8Mx8 or 4Mx16 110ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M58LW064C110N6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x16, Uniform Block, Burst) 3V Supply Flash Memory |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。