參數(shù)資料
型號： M58LW064BT
廠商： 意法半導體
英文描述： 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories
中文描述： 64兆位x16和x16/x32，塊擦除低壓閃存
文件頁數(shù)： 28/53頁
文件大?。?/td> 319K
代理商： M58LW064BT
M58LW064A, M58LW064B
28/53
Table 22. DC Characteristics
(T
A
= 0 to 70
°
C, –40 to 85
°
C, V
DD
= 2.7V to 3.6V)
Symbol
Parameter
Note: 1. Sampled only, not 100% tested.
2. Biasing RP pin to V
HH
is allowed for a maximum cumulative period of 80 hours.
3. Current increases to I
CC
+ I
CC5
during a read operation.
Test Condition
Min
Max
Unit
I
LI
Input Leakage Current
0V
≤
V
IN
≤
V
DDQ
±
1
μ
A
I
LO
Output Leakage Current
0V
≤
V
OUT
≤
V
DDQ
±
5
μ
A
I
CC
Supply Current (Random Read)
E = V
IL
, G = V
IH
, f
add
= 6MHz
30
mA
I
CCB
Supply Current (Burst Read)
E = V
IL
, G = V
IH
, f
clock
= 50MHz
50
mA
I
CC1
Supply Current (Standby)
E = V
DD
±
0.2V,
RP = V
DD
±
0.2V
40
mA
Supply Current (Auto Low-Power)
2
mA
I
CC2
Supply Current (Reset/Power-down)
RP = V
SS
±
0.2V
1
μ
A
I
CC3(1)
Supply Current (Program or Erase,
Set Lock Bit, Erase Lock Bit)
Write to Buffer and program
Block Erase in progress
30
mA
I
CC4
Supply Current
(Erase/Program Suspend)
E = V
IH
40
μ
A
V
IL
Input Low Voltage
–0.5
0.4
V
V
IH
Input High Voltage
V
DDQ
–0.4
V
DDQ
+ 0.3
V
V
OL
Output Low Voltage
I
OL
= 100
μ
A
0.1
V
V
OH
Output High Voltage CMOS
I
OH
= –100
μ
A
V
DDQ
–0.1
V
V
HH(2)
RP Hardware Block Unlock Voltage
Block Erase in progress,
Write to Bufferand Program
8.5
9.5
V
V
LKO
V
DD
Supply Voltage (Erase and
Program lockout)
2.2
V
相關PDF資料
PDF描述
M58LW064C 64 Mbit (4Mb x16, Uniform Block, Burst) 3V Supply Flash Memory
M58LW064C110N1T 64 Mbit (4Mb x16, Uniform Block, Burst) 3V Supply Flash Memory
M58LW064BZA 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories
M58LW064A150NH6T 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories
M58LW064B150NH6T 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories
相關代理商/技術參數(shù)
參數(shù)描述
M58LW064BZA 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories
M58LW064C 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x16, Uniform Block, Burst) 3V Supply Flash Memory
M58LW064C110N1T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x16, Uniform Block, Burst) 3V Supply Flash Memory
M58LW064C110N6 功能描述:閃存 8Mx8 or 4Mx16 110ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M58LW064C110N6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x16, Uniform Block, Burst) 3V Supply Flash Memory
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