參數(shù)資料
型號(hào): M58LW064BT
廠商: 意法半導(dǎo)體
英文描述: 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories
中文描述: 64兆位x16和x16/x32,塊擦除低壓閃存
文件頁數(shù): 27/53頁
文件大小: 319K
代理商: M58LW064BT
27/53
M58LW064A, M58LW064B
Figure 8. AC Testing Load Circuit
AI03229
1.3V
OUT
CL= 30pF
CLincludes JIG capacitance
3.3k
1N914
DEVICE
UNDER
TEST
Figure 7. AC Testing Input Output Waveform
Note: V
DD
= V
DDQ
.
AI00610
VDDQ
0V
VDDQ/2
Table 20. AC Measurement Conditions
Clock Rise and Fall Times
3ns
Input Rise and Fall Times
4ns
Input Pulses Voltages
0V to V
DDQ
Input and Output Timing Ref. Voltages
V
DDQ
/2
Table 21. Capacitance
(T
A
= 25
°
C, f = 1 MHz)
Symbol
Parameter
Test Condition
Typ
Max
Unit
C
IN
Input Capacitance
V
IN
= 0V
6
8
pF
C
OUT
Output Capacitance
V
OUT
= 0V
8
12
pF
相關(guān)PDF資料
PDF描述
M58LW064C 64 Mbit (4Mb x16, Uniform Block, Burst) 3V Supply Flash Memory
M58LW064C110N1T 64 Mbit (4Mb x16, Uniform Block, Burst) 3V Supply Flash Memory
M58LW064BZA 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories
M58LW064A150NH6T 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories
M58LW064B150NH6T 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M58LW064BZA 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories
M58LW064C 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x16, Uniform Block, Burst) 3V Supply Flash Memory
M58LW064C110N1T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x16, Uniform Block, Burst) 3V Supply Flash Memory
M58LW064C110N6 功能描述:閃存 8Mx8 or 4Mx16 110ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M58LW064C110N6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x16, Uniform Block, Burst) 3V Supply Flash Memory