參數(shù)資料
型號(hào): M58LW064BT
廠商: 意法半導(dǎo)體
英文描述: 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories
中文描述: 64兆位x16和x16/x32,塊擦除低壓閃存
文件頁(yè)數(shù): 42/53頁(yè)
文件大?。?/td> 319K
代理商: M58LW064BT
M58LW064A, M58LW064B
42/53
Figure 21. Program Suspend & Resume Flowchart and Pseudo Code
Write
70h
Command
AI00612
Read Status
Register
YES
NO
b7 = 1
YES
NO
b4 = 1
Program Continues
Write FFh
Command
PES
instruction:
– write B0h
command
(memory enters read register
state after the PES instruction)
do:
– read status
register
(E or G must be toggled)
while b7 = 1
If b4 = 0, Program
completed
(at this point the memory will
accept only the RD or PER instruction)
RD
instruction:
– write FFh
command
– one or more data
reads
from another block
Write
D0h
Command
PER
instruction:
– write D0h
command
to resume
erasure
– if the program operation completed
then this is not necessary. The device
returns to Read Array as normal
(as if the Program/Erase suspend
was not issued).
Read data
from
another block
Start
Write
B0h
Command
Program Complete
Write FFh
Command
Read Data
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PDF描述
M58LW064C 64 Mbit (4Mb x16, Uniform Block, Burst) 3V Supply Flash Memory
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M58LW064BZA 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories
M58LW064C 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x16, Uniform Block, Burst) 3V Supply Flash Memory
M58LW064C110N1T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x16, Uniform Block, Burst) 3V Supply Flash Memory
M58LW064C110N6 功能描述:閃存 8Mx8 or 4Mx16 110ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M58LW064C110N6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x16, Uniform Block, Burst) 3V Supply Flash Memory