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參數(shù)資料
| 型號： | M38K07M4L-XXXHP |
| 元件分類： | 微控制器/微處理器 |
| 英文描述： | 8-BIT, MROM, 12 MHz, MICROCONTROLLER, PQFP64 |
| 封裝： | 10 X 10 MM, 0.50 MM PITCH, PLASTIC, LQFP-64 |
| 文件頁數(shù)： | 114/133頁 |
| 文件大?。?/td> | 1359K |
| 代理商： | M38K07M4L-XXXHP |
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38K0 Group
Rev.3.00
Oct 05, 2006
page 81 of 129
REJ03B0192-0300
FLASH MEMORY MODE
The 38K0 group’s flash memory version has an internal new
DINOR (DIvided bit line NOR) flash memory that can be rewritten
with a single power source when VCC is 4.5 to 5.25 V, and 2 power
sources when VCC is 3.0 to 4.5 V.
For this flash memory, three flash memory modes are available in
which to read, program, and erase: the parallel I/O and standard
serial I/O modes in which the flash memory can be manipulated
using a programmer and the CPU rewrite mode in which the flash
memory can be manipulated by the Central Processing Unit
(CPU).
Summary
Table 8 lists the summary of the 38K0 group’s flash memory ver-
sion.
This flash memory version has some blocks on the flash memory
as shown in Figure 116 and each block can be erased. The flash
memory is divided into User ROM area and Boot ROM area.
In addition to the ordinary User ROM area to store the MCU op-
eration control program, the flash memory has a Boot ROM area
that is used to store a program to control rewriting in CPU rewrite
and standard serial I/O modes. This Boot ROM area has had a
standard serial I/O mode control program stored in it when
shipped from the factory. However, the user can write a rewrite
control program in this area that suits the user’s application sys-
tem. This Boot ROM area can be rewritten in only parallel I/O
mode.
Table 8 Summary of 38K0 group’s flash memory version
Notes 1: In the parallel I/O mode or the standard serial I/O mode, use the exclusive external equipment flash programmer which supports the 38K0 Group
(flash memory version).
2: The Boot ROM area has had a standard serial I/O mode control program stored in it when shipped from the factory. This Boot ROM area can be re-
written in only parallel I/O mode.
Item
Power source voltage (Vcc)
Program/Erase VPP voltage (VPP)
Flash memory mode
Erase block division
User ROM area
Boot ROM area
Program method
Erase method
Program/Erase control method
Number of commands
Number of program/Erase times
Data retention period
ROM code protection
Specifications
3.00 – 5.25 V (L version) (Program and erase in 4.00 to 5.25 V of Vcc.)
3.00 – 4.00 V (L version) (Program and erase in 3.00 to 5.25 V of Vcc.)
4.50 – 5.25 V
3 modes; Flash memory can be manipulated as follows:
CPU rewrite mode: Manipulated by the Central Processing Unit (CPU).
Parallel I/O mode: Manipulated using an external programmer (Note 1)
Standard serial I/O mode: Manipulated using an external programmer (Note 1)
1 block (32 Kbytes)
1 block (4 Kbytes) (Note 2)
Byte program
Batch erasing
Program/Erase control by software command
6 commands
100 times
10 years
Available in parallel I/O mode and standard serial I/O mode
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