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參數(shù)資料
| 型號(hào)： | M30LW128D110ZE6T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 128 Mbit (two 64Mbit, x8/x16, Uniform Block, Flash Memories) 3V Supply, Multiple Memory Product |
| 中文描述： | 128兆位（兩個(gè)64兆比特，x8/x16，統(tǒng)一座，快閃記憶體）3V電源，多記憶體產(chǎn)品 |
| 文件頁數(shù)： | 47/57頁 |
| 文件大?。?/td> | 860K |
| 代理商： | M30LW128D110ZE6T |
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M30LW128D
Figure 20. Program Suspend & Resume Flowchart and Pseudo Code
Note: 1. PA = Program Address. The Program/ Erase Suspend command must be issued to the same address as the current Program com-
mand.
2. The Read Status Register command must be issued to the same address as the Program/ Erase Suspend command.
3. PA = Program Address. The Program/ Erase Resume command must be issued to the same address as the Program/ Erase Sus-
pend command.
AI07514
Read Status
Register
(2)
YES
NO
b7 = 1
YES
NO
b2 = 1
Program Continues
Write FFh
Program/Erase Suspend Command:
– write B0h to address PA
do:
– read status register
while b7 = 1
If b2 = 0, Program completed
Read Memory Array instruction:
– write FFh
– one or more data reads
from other blocks
Write D0h
Add PA
(3)
Program Erase Resume Command:
– write D0h to address PA
to resume erasure
– if the program operation completed
then this is not necessary. The device
returns to Read Array as normal
(as if the Program/Erase Suspend
command was not issued).
Read data from
another block
Start
Write B0h
Add PA
(1)
Program Complete
Write FFh
Read Data
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