參數(shù)資料
型號(hào)： M30LW128D110ZE6T
廠商： 意法半導(dǎo)體
英文描述： 128 Mbit (two 64Mbit, x8/x16, Uniform Block, Flash Memories) 3V Supply, Multiple Memory Product
中文描述： 128兆位（兩個(gè)64兆比特，x8/x16，統(tǒng)一座，快閃記憶體）3V電源，多記憶體產(chǎn)品
文件頁(yè)數(shù)： 43/57頁(yè)
文件大?。?/td> 860K
代理商： M30LW128D110ZE6T
43/57
M30LW128D
Table 28. CFI - Device Voltage and Timing Specification
Note: 1. Bits are coded in Binary Code Decimal, bit7 to bit4 are scaled in Volts and bit3 to bit0 in mV.
2. Bit7 to bit4 are coded in Hexadecimal and scaled in Volts while bit3 to bit0 are in Binary Code Decimal and scaled in 100mV.
3. Not supported.
4. In x8 mode A0 must be set to V
IL
. Otherwise, 00h will be output.
Address
Data
Description
x16
x8
(4)
001Bh
36h
27h
(1)
V
DD
Min, 2.7V
001Ch
38h
36h
(1)
V
DD
max, 3.6V
001Dh
3Ah
00h
(2)
V
PP
m
in – Not Available
001Eh
3Ch
00h
(2)
V
PP
max – Not Available
001Fh
3Eh
04h
2
n
μs typical time-out for Word, DWord prog – Not Available
0020h
40h
08h
2
n
μs, typical time-out for max buffer write
0021h
42h
0Ah
2
n
ms, typical time-out for Erase Block
0022h
44h
00h
(3)
2
n
ms, typical time-out for chip erase – Not Available
0023h
46h
04h
2
n
x typical for Word Dword time-out max – Not Available
0024h
48h
04h
2
n
x typical for buffer write time-out max
0025h
4Ah
04h
2
n
x typical for individual block erase time-out maximum
0026h
4Ch
00h
(3)
2
n
x typical for chip erase max time-out – Not Available
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