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參數(shù)資料
| 型號(hào)： | M30LW128D110ZA6T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 128 Mbit (two 64Mbit, x8/x16, Uniform Block, Flash Memories) 3V Supply, Multiple Memory Product |
| 中文描述： | 128兆位（兩個(gè)64兆比特，x8/x16，統(tǒng)一座，快閃記憶體）3V電源，多記憶體產(chǎn)品 |
| 文件頁(yè)數(shù)： | 48/57頁(yè) |
| 文件大?。?/td> | 860K |
| 代理商： | M30LW128D110ZA6T |
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M30LW128D
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Figure 21. Erase Flowchart and Pseudo Code
Note: 1. The Read Status Register command must be issued to the same address as the Block Erase command.
2. If an error is found, the Status Register must be cleared (Clear Status Register Command) before further Program or Erase oper-
ations.
Write 20h to
Block Address
AI07515
Start
Write D0h to
Block Address
Read Status
Register
(1)
YES
NO
b7 = 1
YES
NO
b3 = 0
NO
b4, b5 = 0
VPEN Invalid
Error
(2)
Command
Sequence Error
Erase command:
– write 20h to Block Address
– write D0h to Block Address
(A12-A17)
(memory enters read Status
Register after the Erase command)
do:
– read status register
– if Program/Erase Suspend command
given execute suspend erase loop
while b7 = 1
If b3 = 1, VPEN invalid error:
– error handler
If b4, b5 = 1, Command Sequence error:
– error handler
YES
NO
b5 = 0
Erase
Error
(2)
YES
NO
Suspend
Suspend
Loop
If b5 = 1, Erase error:
– error handler
YES
End
YES
NO
b1 = 0
Erase to Protected
Block Error
If b1 = 1, Erase to Protected Block Error:
– error handler
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