參數(shù)資料
型號: M30LW128D110ZA6T
廠商: 意法半導(dǎo)體
英文描述: 128 Mbit (two 64Mbit, x8/x16, Uniform Block, Flash Memories) 3V Supply, Multiple Memory Product
中文描述: 128兆位(兩個64兆比特,x8/x16,統(tǒng)一座,快閃記憶體)3V電源,多記憶體產(chǎn)品
文件頁數(shù): 33/57頁
文件大小: 860K
代理商: M30LW128D110ZA6T
33/57
M30LW128D
Figure 13. Write AC Waveform, Write Enable Controlled
Note: 1. Refer to Table 3 for details of how the device is enabled.
2. Not available with the LFBGA88 package.
Table 18. Write AC Characteristics, Write Enable Controlled
Symbol
Parameter
Test Condition
M30LW128D
Unit
110
t
AVWH
Address Valid to Write Enable High
E = V
IL
Min
50
ns
t
DVWH
Data Input Valid to Write Enable High
E = V
IL
Min
50
ns
t
ELWL
Chip Enable Low to Write Enable Low
Min
0
ns
t
VPHWH
Program/Erase Enable High to Write Enable High
Min
0
ns
t
WHAX
Write Enable High to Address Transition
E = V
IL
Min
0
ns
t
WHBL
Write Enable High to Status/(Ready/Busy) low
Max
500
ns
t
WHDX
Write Enable High to Input Transition
E = V
IL
Min
0
ns
t
WHEH
Write Enable High to Chip Enable High
Min
0
ns
t
GHWL
Output Enable High to Write Enable Low
Min
20
ns
t
WHGL
Write Enable High to Output Enable Low
Min
35
ns
t
WHWL
Write Enable High to Write Enable Low
Min
30
ns
t
WLWH
Write Enable Low to Write Enable High
E = V
IL
Min
70
ns
AI07511
DQ0-DQ15
STS(2)
(Ready/Busy mode)
W
A0-A23
E
(1)
G
INPUT
VALID
tWHEH
tAVWH
tWLWH
tELWL
VPEN
tWHAX
tWHWL
tWHDX
tDVWH
tVPHWH
tWHGL
tGHWL
tWHBL
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