參數(shù)資料
型號(hào): M30LW128D110ZE1T
廠商: 意法半導(dǎo)體
英文描述: 128 Mbit (two 64Mbit, x8/x16, Uniform Block, Flash Memories) 3V Supply, Multiple Memory Product
中文描述: 128兆位(兩個(gè)64兆比特,x8/x16,統(tǒng)一座,快閃記憶體)3V電源,多記憶體產(chǎn)品
文件頁(yè)數(shù): 1/57頁(yè)
文件大?。?/td> 860K
代理商: M30LW128D110ZE1T
1/57
PRELIMINARY DATA
February 2003
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
M30LW128D
128 Mbit (two 64Mbit, x8/x16, Uniform Block, Flash Memories)
3V Supply, Multiple Memory Product
FEATURES SUMMARY
I
TWO M58LW064D 64Mbit FLASH MEMORIES
STACKED IN A SINGLE PACKAGE
I
WIDE x8 or x16 DATA BUS for HIGH
BANDWIDTH
I
SUPPLY VOLTAGE
– V
DD
= 2.7 to 3.6V for Program, Erase and
Read operations
– V
DDQ
= 1.8 to V
DD
for I/O buffers
I
ACCESS TIME
– Random Read 110ns
– Page Mode Read 110/25ns
I
PROGRAMMING TIME
– 16 Word Write Buffer
– 16μs Word effective programming time
I
128 UNIFORM 64 KWord/128KByte MEMORY
BLOCKS
I
BLOCK PROTECTION/ UNPROTECTION
I
PROGRAM and ERASE SUSPEND
I
128 bit PROTECTION REGISTER
I
COMMON FLASH INTERFACE
I
100, 000 PROGRAM/ERASE CYCLES per
BLOCK
I
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code M30LW128D: 8817h
Figure 1. Packages
TSOP56 (N)
14 x 20 mm
TBGA64 (ZA)
10 x 13mm
TBGA
FBGA
LFBGA88 (ZE)
8 x 10mm
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