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參數(shù)資料
| 型號： | M30LW128D110ZA6T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 128 Mbit (two 64Mbit, x8/x16, Uniform Block, Flash Memories) 3V Supply, Multiple Memory Product |
| 中文描述： | 128兆位（兩個64兆比特，x8/x16，統(tǒng)一座，快閃記憶體）3V電源，多記憶體產(chǎn)品 |
| 文件頁數(shù)： | 18/57頁 |
| 文件大小： | 860K |
| 代理商： | M30LW128D110ZA6T |
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M30LW128D
18/57
any command. Typical Erase times are given in
Table 10.
See Appendix C, Figure 21, Block Erase Flow-
chart and Pseudo Code, for a suggested flowchart
on using the Block Erase command.
Word/Byte Program Command.
The
Byte Program command is used to program a sin-
gle Word or Byte in the memory array. Two Bus
Write operations are required to issue the com-
mand; the first write cycle sets up the Word Pro-
gram command, the second write cycle latches the
address and data to be programmed in the internal
state machine and starts the Program/Erase Con-
troller.
If the block being programmed is protected an er-
ror will be set in the Status Register and the oper-
ation will abort without affecting the data in the
memory array. The block must be unprotected us-
ing the Blocks Unprotect command.
Write to Buffer and Program Command.
The
Write to Buffer and Program command is used to
program the memory array. If the command is is-
sued with A23 High the Upper Memory will be pro-
grammed, if the command is issued with A23 Low
the Lower Memory will be programmed.
Up to 16 Words/32 Bytes can be loaded into the
Write Buffer and programmed into the memory ar-
ray. Each Write Buffer has the same A5-A22 ad-
dresses. In Byte-wide mode only A0-A4 may
change, in Word-wide mode only A1-A4 may
change.
Four successive steps are required to issue the
command.
1. One Bus Write operation is required to set up
the Write to Buffer and Program Command. Is-
sue the set up command with the selected
memory Block Address where the program op-
eration should occur (any address in the block
where the values will be programmed can be
used). Any Bus Read operations will start to out-
put the Status Register after the 1st cycle.
2. Use one Bus Write operation to write the same
block address along with the value N on the
Data Inputs/Output, where N+1 is the number of
Words/Bytes to be programmed.
3. Use N+1 Bus Write operations to load the ad-
dress and data for each Word into the Write
Buffer. The addresses must have the same A5-
A22.
4. Finally, use one Bus Write operation to issue the
final cycle to confirm the command and start the
Program operation.
Invalid address combinations or failing to follow
the correct sequence of Bus Write cycles will set
an error in the Status Register and abort the oper-
ation without affecting the data in the memory ar-
Word/
ray. The Status Register should be cleared before
re-issuing the command.
If the block being programmed is protected an er-
ror will be set in the Status Register and the oper-
ation will abort without affecting the data in the
memory array. The block must be unprotected us-
ing the Blocks Unprotect command.
See Appendix C, Figure 19, Write to Buffer and
Program Flowchart and Pseudo Code, for a sug-
gested flowchart on using the Write to Buffer and
Program command.
Program/Erase Suspend Command.
The
gram/Erase Suspend command is used to pause a
Write to Buffer and Program or Erase operation.
The command will only be accepted during a Pro-
gram or an Erase operation. It can be issued at
any time during an Erase operation but will only be
accepted during a Write to Buffer and Program
command if the Program/Erase Controller is run-
ning.
One Bus Write cycle is required to issue the Pro-
gram/Erase Suspend command and pause the
Program/Erase Controller. The command must be
issued to the same address as the current Pro-
gram or Erase operation. Once the command is is-
sued it is necessary to poll the Program/Erase
Controller Status bit (bit 7) to find out when the
Program/Erase Controller has paused; no other
commands will be accepted until the Program/
Erase Controller has paused. After the Program/
Erase Controller has paused, the device will con-
tinue to output the Status Register until another
command is issued.
During the polling period between issuing the Pro-
gram/Erase Suspend command and the Program/
Erase Controller pausing, it is possible for the op-
eration to complete. Once the Program/Erase
Controller Status bit (bit 7) indicates that the Pro-
gram/Erase Controller is no longer active, the Pro-
gram Suspend Status bit (bit 2) or the Erase
Suspend Status bit (bit 6) can be used to deter-
mine if the operation has completed or is suspend-
ed. For timing on the delay between issuing the
Program/Erase Suspend command and the Pro-
gram/Erase Controller pausing see Table 10.
During Program/Erase Suspend the Read Memo-
ry Array, Read Status Register, Read Electronic
Signature, Read Query and Program/Erase Re-
sume commands will be accepted by the Com-
mand Interface. Additionally, if the suspended
operation was Erase then the Word Program,
Write to Buffer and Program, and Program Sus-
pend commands will also be accepted.
When one of the devices is being Program or
Erase Suspended, any command issued to the
other internal Flash memory will be accepted.
When a program operation is completed inside a
Pro-
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