參數(shù)資料
型號(hào)： M30L0R8000T0ZAQ
廠商： 意法半導(dǎo)體
英文描述： 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
中文描述： 256兆位（16Mb的x16插槽，多銀行，多層次，多突發(fā)）1.8V電源快閃記憶體
文件頁(yè)數(shù)： 63/83頁(yè)
文件大?。?/td> 1363K
代理商： M30L0R8000T0ZAQ
63/83
M30L0R8000T0, M30L0R8000B0
Table 40. Primary Algorithm-Specific Extended Query Table
Offset
Data
Description
Value
(P)h = 10Ah
0050h
Primary Algorithm extended Query table unique ASCII string “PRI”
"P"
0052h
"R"
0049h
"I"
(P+3)h =10Dh
0031h
Major version number, ASCII
"1"
(P+4)h = 10Eh
0033h
Minor version number, ASCII
"3"
(P+5)h = 10Fh
00E6h
Extended Query table contents for Primary Algorithm. Address (P+5)h
contains less significant byte.
bit 0 Chip Erase supported(1 = Yes, 0 = No)
bit 1 Erase Suspend supported(1 = Yes, 0 = No)
bit 2 Program Suspend supported(1 = Yes, 0 = No)
bit 3 Legacy Lock/Unlock supported(1 = Yes, 0 = No)
bit 4 Queued Erase supported(1 = Yes, 0 = No)
bit 5 Instant individual block locking supported(1 = Yes, 0 = No)
bit 6 Protection bits supported(1 = Yes, 0 = No)
bit 7 Page mode read supported(1 = Yes, 0 = No)
bit 8 Synchronous read supported(1 = Yes, 0 = No)
bit 9 Simultaneous operation supported(1 = Yes, 0 = No)
bit 10 to 31 Reserved; undefined bits are ‘0’. If bit 31 is ’1’ then another 31
bit field of optional features follows at the end of the bit-30
field.
No
Yes
Yes
No
No
Yes
Yes
Yes
Yes
Yes
0003h
(P+7)h = 111h
0000h
(P+8)h = 112h
0000h
(P+9)h = 113h
0001h
Supported Functions after Suspend
Read Array, Read Status Register and CFI Query
bit 0 Program supported after Erase Suspend (1 = Yes, 0 = No)
bit 7 to 1 Reserved; undefined bits are ‘0’
Yes
(P+A)h = 114h
0003h
Block Protect Status
Defines which bits in the Block Status Register section of the Query are
implemented.
bit 0 Block protect Status Register Lock/Unlock
bit active (1 = Yes, 0 = No)
bit 1 Block Lock Status Register Lock-Down bit active (1 = Yes, 0 = No)
bit 15 to 2 Reserved for future use; undefined bits are ‘0’
Yes
Yes
(P+B)h = 115h
0000h
(P+C)h = 116h
0018h
V
DD
Logic Supply Optimum Program/Erase voltage (highest performance)
bit 7 to 4 HEX value in volts
bit 3 to 0 BCD value in 100 mV
1.8V
(P+D)h = 117h
0090h
V
PP
Supply Optimum Program/Erase voltage
bit 7 to 4 HEX value in volts
bit 3 to 0 BCD value in 100 mV
9V
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M30L0R8000T0ZAQE 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000T0ZAQF 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000T0ZAQT 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L40C 制造商:VISHAY 制造商全稱(chēng):Vishay Siliconix 功能描述:Dual Common-Cathode Schottky Rectifier
M30L40C-E3/4W 功能描述:肖特基二極管與整流器 40 Volt 30 Amp Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
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