參數(shù)資料
型號： M30L0R8000T0ZAQ
廠商： 意法半導(dǎo)體
英文描述： 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
中文描述： 256兆位（16Mb的x16插槽，多銀行，多層次，多突發(fā)）1.8V電源快閃記憶體
文件頁數(shù)： 38/83頁
文件大?。?/td> 1363K
代理商： M30L0R8000T0ZAQ
M30L0R8000T0, M30L0R8000B0
38/83
PROGRAM AND ERASE TIMES AND ENDURANCE CYCLES
The Program and Erase times and the number of
Program/ Erase cycles per block are shown in
Ta-
ble 17.
Exact erase times may change depending
on the memory array condition. The best case is
when all the bits in the block are at ‘0’ (pre-pro-
grammed). The worst case is when all the bits in
the block are at ‘1’ (not preprogrammed). Usually,
the system overhead is negligible with respect to
the erase time. In the M30L0R8000x0 the maxi-
mum number of Program/Erase cycles depends
on the V
PP
voltage supply used.
Table 17. Program/Erase Times and Endurance Cycles
Note: 1. T
A
= –25 to 85°C; V
DD
= 1.7V to 2V; V
DDQ
= 1.7V to 2V.
2. Values are liable to change with the external system-level overhead (command sequence and Status Register polling execution).
3. Excludes the time needed to execute the command sequence.
4. This is an average value on the entire device.
Parameter
Condition
Min
Typ
Typical
after
100kW/E
Cycles
Max
Unit
V
P
D
Erase
Parameter Block (16 KWord)
0.4
1
2.5
s
Main Block (64 KWord)
Preprogrammed
1
3
4
s
Not Preprogrammed
1.2
4
s
Program
(3)
SIngle Cell
Word Program
30
60
μs
Buffer Program
30
60
μs
Single Word
Word Program
90
180
μs
Buffer Program
90
180
μs
Buffer (32 Words) (Buffer Program)
440
880
μs
Main Block (64 KWord) (Buffer Program)
880
ms
Suspend
Latency
Program
20
25
μs
Erase
20
25
μs
Program/
Erase Cycles
(per Block)
Main Blocks
100,000
cycles
Parameter Blocks
100,000
cycles
V
P
P
Erase
Parameter Block (16 KWord)
0.4
2.5
s
Main Block (64 KWord)
1
4
s
Program
(3)
Single Cell
Word Program
30
60
μs
Single Word
Word Program
85
170
μs
Buffer Enhanced Factory
Program
(4)
10
μs
Buffer (32 Words)
Buffer Program
340
680
μs
Buffer Enhanced Factory
Program
320
μs
Main Block (64 KWords)
Buffer Program
640
ms
Buffer Enhanced Factory
Program
640
ms
Bank (16 Mbits)
Buffer Program
10
s
Buffer Enhanced Factory
Program
10
s
Program/
Erase Cycles
(per Block)
Main Blocks
1000
cycles
Parameter Blocks
2500
cycles
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M30L0R8000T0ZAQT 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
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