參數(shù)資料
型號(hào)： M30L0R8000T0ZAQT
廠商： 意法半導(dǎo)體
英文描述： 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
中文描述： 256兆位（16Mb的x16插槽，多銀行，多層次，多突發(fā)）1.8V電源快閃記憶體
文件頁(yè)數(shù)： 1/83頁(yè)
文件大小： 1363K
代理商： M30L0R8000T0ZAQT
1/83
May 2005
M30L0R8000T0
M30L0R8000B0
256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst)
1.8V Supply Flash Memory
FEATURES SUMMARY
■
SUPPLY VOLTAGE
–
V
DD
= 1.7V to 2.0V for program, erase and
read
–
V
DDQ
= 1.7V to 2.0V for I/O Buffers
–
V
PP
= 9V for fast program (12V tolerant)
SYNCHRONOUS / ASYNCHRONOUS READ
–
Synchronous Burst Read mode:
54MHz
–
Asynchronous Page Read mode
–
Random Access: 85ns
SYNCHRONOUS BURST READ SUSPEND
PROGRAMMING TIME
–
10μs typical Word program time using
Buffer Enhanced Factory Program
command
MEMORY ORGANIZATION
–
Multiple Bank Memory Array: 16 Mbit
Banks
–
Parameter Blocks (Top or Bottom
location)
DUAL OPERATIONS
–
program/erase in one Bank while read in
others
–
No delay between read and write
operations
BLOCK LOCKING
–
All blocks locked at power-up
–
Any combination of blocks can be locked
with zero latency
–
WP for Block Lock-Down
–
Absolute Write Protection with V
PP
= V
SS
SECURITY
–
64 bit unique device number
–
2112 bit user programmable OTP Cells
COMMON FLASH INTERFACE (CFI)
100,000 PROGRAM/ERASE CYCLES per
BLOCK
■
■
■
■
■
■
■
■
■
Figure 1. Package
■
ELECTRONIC SIGNATURE
–
Manufacturer Code: 20h
–
Top Device Code,
M30L0R8000T0: 880Dh.
–
Bottom Device Code,
M30L0R8000B0: 880Eh.
PACKAGE
–
Compliant with Lead-Free Soldering
Processes
–
Lead-Free Versions
■
TFBGA88 (ZAQ) 8 x 10mm
FBGA
相關(guān)PDF資料
PDF描述
M30L0R8000T0ZAQE AB 35C 7#12,28#16 PIN RECP
M30L0R8000B0ZAQE 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000B0ZAQF CAP 0.1UF 50V 10% X7R DIP-2 BULK S-MIL-C-39014
M30L0R8000B0ZAQT 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000B0ZAQ 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
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