參數(shù)資料
型號(hào)： M30L0R8000T0ZAQ
廠商： 意法半導(dǎo)體
英文描述： 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
中文描述： 256兆位（16Mb的x16插槽，多銀行，多層次，多突發(fā)）1.8V電源快閃記憶體
文件頁(yè)數(shù)： 10/83頁(yè)
文件大?。?/td> 1363K
代理商： M30L0R8000T0ZAQ
M30L0R8000T0, M30L0R8000B0
10/83
Table 2. Bank Architecture
Figure 4. Memory Map
Number
Bank Size
Parameter Blocks
Main Blocks
Parameter Bank
16 Mbits
4 blocks of 16 KWords
15 blocks of 64 KWords
Bank 1
16 Mbits
-
16 blocks of 64 KWords
Bank 2
16 Mbits
-
16 blocks of 64 KWords
Bank 3
16 Mbits
-
16 blocks of 64 KWords
-
-
-
-
Bank 14
16 Mbits
-
16 blocks of 64 KWords
Bank 15
16 Mbits
-
16 blocks of 64 KWords
AI08498
M30L0R8000T0 - Top Boot Block
Address lines A23-A0
16 Main
Blocks
Bank 15
M30L0R8000B0 - Bottom Boot Block
Address lines A23-A0
64 KWord
000000h
00FFFFh
64 KWord
0F0000h
0FFFFFh
64 KWord
C00000h
C0FFFFh
64 KWord
CF0000h
CFFFFFh
D00000h
D0FFFFh
64 KWord
64 KWord
DF0000h
DFFFFFh
E00000h
E0FFFFh
64 KWord
64 KWord
EF0000h
EFFFFFh
F00000h
F0FFFFh
64 KWord
64 KWord
FE0000h
FEFFFFh
FF0000h
FF3FFFh
16 KWord
16 KWord
FFC000h
FFFFFFh
4 Parameter
Blocks
Parameter
Bank
Parameter
Bank
16 KWord
000000h
003FFFh
16 KWord
00C000h
00FFFFh
010000h
01FFFFh
64 KWord
64 KWord
0F0000h
0FFFFFh
100000h
10FFFFh
64 KWord
64 KWord
1F0000h
1FFFFFh
200000h
20FFFFh
64 KWord
64 KWord
2F0000h
2FFFFFh
300000h
30FFFFh
64 KWord
64 KWord
3F0000h
3FFFFFh
64 KWord
F00000h
F0FFFFh
64 KWord
FF0000h
FFFFFFh
Bank 3
Bank 2
Bank 1
Bank 15
Bank 3
Bank 2
Bank 1
16 Main
Blocks
16 Main
Blocks
16 Main
Blocks
15 Main
Blocks
4 Parameter
Blocks
15 Main
Blocks
16 Main
Blocks
16 Main
Blocks
16 Main
Blocks
16 Main
Blocks
相關(guān)PDF資料
PDF描述
M30L0R8000T0ZAQF 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000T0ZAQT 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000T0ZAQE AB 35C 7#12,28#16 PIN RECP
M30L0R8000B0ZAQE 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000B0ZAQF CAP 0.1UF 50V 10% X7R DIP-2 BULK S-MIL-C-39014
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M30L0R8000T0ZAQE 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000T0ZAQF 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000T0ZAQT 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L40C 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual Common-Cathode Schottky Rectifier
M30L40C-E3/4W 功能描述:肖特基二極管與整流器 40 Volt 30 Amp Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
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