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參數(shù)資料
| 型號： | M30L0R8000B0 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| 中文描述： | 256兆位（16Mb的x16插槽，多銀行，多層次，多突發(fā)）1.8V電源快閃記憶體 |
| 文件頁數(shù)： | 57/83頁 |
| 文件大?。?/td> | 1363K |
| 代理商： | M30L0R8000B0 |
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M30L0R8000T0, M30L0R8000B0
APPENDIX A. BLOCK ADDRESS TABLES
The following set of equations can be used to calculate a complete set of block addresses using the infor-
mation contained in Tables
30
,
31
,
32
,
33
,
34
and
35
.
To calculate the Block Base Address from the Block Number:
First it is necessary to calculate the Bank Number and the Block Number Offset. This can be achieved
using the following formulas:
Bank_Number = (Block_Number
3) / 16
Block_Number_Offset = Block_Number
3
(Bank_Number x 16)
If Bank_Number = 0, the Block Base Address can be directly read from
Table 30.
or
Table 33.
(Parameter
Bank Block Addresses) in the Block Number Offset row. Otherwise:
Block_Base_Address = Bank_Base_Address + Block_Base_Address_Offset
To calculate the Bank Number and the Block Number from the Block Base Address:
If the address is in the range of the Parameter Bank, the Bank Number is 0 and the Block Number can be
directly read from
Table 30.
or
Table 33.
(Parameter Bank Block Addresses), in the row that corresponds
to the address given. Otherwise, the Block Number can be calculated using the formulas below:
For the top configuration (M30L0R8000T0):
Block_Number = ((NOT address) / 2
16
) + 3
For the bottom configuration (M30L0R8000B0):
Block_Number = (address / 2
16
) + 3
For both configurations the Bank Number and the Block Number Offset can be calculated using the fol-
lowing formulas:
Bank_Number = (Block_Number
3) / 16
Block_Number_Offset = Block_Number
3
(Bank_Number x 16)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M30L0R8000B0ZAQ | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L0R8000B0ZAQE | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L0R8000B0ZAQF | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L0R8000B0ZAQT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L0R8000T0 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
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