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參數(shù)資料
| 型號(hào)： | M30L0R8000B0 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| 中文描述： | 256兆位（16Mb的x16插槽，多銀行，多層次，多突發(fā)）1.8V電源快閃記憶體 |
| 文件頁(yè)數(shù)： | 41/83頁(yè) |
| 文件大小： | 1363K |
| 代理商： | M30L0R8000B0 |
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M30L0R8000T0, M30L0R8000B0
Table 21. DC Characteristics - Currents
Note: 1. Sampled only, not 100% tested.
2. V
DD
Dual Operation current is the sum of read and program or erase currents.
Symbol
Parameter
Test Condition
Typ
Max
Unit
I
LI
Input Leakage Current
0V
≤
V
IN
≤
V
DDQ
±1
μA
I
LO
Output Leakage Current
0V
≤
V
OUT
≤
V
DDQ
±1
μA
I
DD1
Supply Current
Asynchronous Read (f=5MHz)
E = V
IL
, G = V
IH
13
15
mA
Supply Current
Synchronous Read (f=54MHz)
4 Word
16
18
mA
8 Word
18
20
mA
16 Word
23
25
mA
Continuous
25
27
mA
I
DD2
Supply Current
(Reset)
RP = V
SS
± 0.2V
50
110
μA
I
DD3
Supply Current (Standby)
E = V
DDQ
± 0.2V
K=V
ss
50
110
μA
I
DD4
Supply Current (Automatic Standby)
E = V
IL
, G = V
IH
50
110
μA
I
DD5
(1)
Supply Current (Program)
V
PP
= V
PPH
8
20
mA
V
PP
= V
DD
10
25
mA
Supply Current (Erase)
V
PP
= V
PPH
8
20
mA
V
PP
= V
DD
10
25
mA
I
DD6 (1,2)
Supply Current
(Dual Operations)
Program/Erase in one Bank,
Asynchronous Read in another
Bank
23
40
mA
Program/Erase in one Bank,
Synchronous Read (Continuous
f=54MHz) in another Bank
35
52
mA
I
DD7(1)
Supply Current Program/ Erase
Suspended (Standby)
E = V
DDQ
± 0.2V
K=V
ss
50
110
μA
I
PP1(1)
V
PP
Supply Current (Program)
V
PP
= V
PPH
2
5
mA
V
PP
= V
DD
0.2
5
μA
V
PP
Supply Current (Erase)
V
PP
= V
PPH
2
5
mA
V
PP
= V
DD
0.2
5
μA
I
PP2
V
PP
Supply Current (Read)
V
PP
≤
V
DD
0.2
5
μA
I
PP3(1)
V
PP
Supply Current (Standby)
V
PP
≤
V
DD
0.2
5
μA
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M30L0R8000B0ZAQ | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L0R8000B0ZAQE | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L0R8000B0ZAQF | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L0R8000B0ZAQT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L0R8000T0 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
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