參數(shù)資料
型號(hào): M30L0R8000B0
廠商: 意法半導(dǎo)體
英文描述: 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
中文描述: 256兆位(16Mb的x16插槽,多銀行,多層次,多突發(fā))1.8V電源快閃記憶體
文件頁(yè)數(shù): 30/83頁(yè)
文件大?。?/td> 1363K
代理商: M30L0R8000B0
M30L0R8000T0, M30L0R8000B0
30/83
Table 12. Burst Type Definition
M
Start
Add.
Sequential
Continuous Burst
4 Words
8 Words
16 Words
W
0
0-1-2-3
0-1-2-3-4-5-6-7
0-1-2-3-4-5-6-7-8-9-10-11-12-13-14-15
0-1-2-3-4-5-6...
1
1-2-3-0
1-2-3-4-5-6-7-0
1-2-3-4-5-6-7-8-9-10-11-12-13-14-15-0
1-2-3-4-5-6-7...
2
2-3-0-1
2-3-4-5-6-7-0-1
2-3-4-5-6-7-8-9-10-11-12-13-14-15-0-1
2-3-4-5-6-7-8...
3
3-0-1-2
3-4-5-6-7-0-1-2
3-4-5-6-7-8-9-10-11-12-13-14-15-0-1-2
3-4-5-6-7-8-9...
...
7
7-4-5-6
7-0-1-2-3-4-5-6
7-8-9-10-11-12-13-14-15-0-1-2-3-4-5-6
7-8-9-10-11-12-13...
...
12
12-13-14-15
12-13-14-15-8-9-10-11 12-13-14-15-0-1-2-3-4-5-6-7-8-9-10-11
12-13-14-15-16-17...
13
13-14-15-12
13-14-15-8-9-10-11-12 13-14-15-0-1-2-3-4-5-6-7-8-9-10-11-12
13-14-15-16-17-18...
14
14-15-12-13
14-15-8-9-10-11-12-13 14-15-0-1-2-3-4-5-6-7-8-9-10-11-12-13
14-15-16-17-18-19...
15
15-12-13-14
15-8-9-10-11-12-13-14 15-0-1-2-3-4-5-6-7-8-9-10-11-12-13-14
15-16-17-18-19-20...
N
0
0-1-2-3
0-1-2-3-4-5-6-7
0-1-2-3-4-5-6-7-8-9-10-11-12-13-14-15
Same as for Wrap
(Wrap /No Wrap
has no effect on
Continuous Burst)
1
1-2-3-4
1-2-3-4-5-6-7-8
1-2-3-4-5-6-7-8--9-10-11-12-13-14-15-
16
2
2-3-4-5
2-3-4-5-6-7-8-9...
2-3-4-5--6-7-8-9-10-11-12-13-14-15-
16-17
3
3-4-5-6
3-4-5-6-7-8-9-10
3-4-5-6-7-8-9-10-11-12-13-14-15-16-
17-18
...
7
7-8-9-10
7-8-9-10-11-12-13-14
7-8-9-10-11-12-13-14-15-16-17-18-19-
20-21-22
...
12
12-13-14-15
12-13-14-15-16-17-18-
19
12-13-14-15-16-17-18-19-20-21-22-
23-24-25-26-27
13
13-14-15-16
13-14-15-16-17-18-19-
20
13-14-15-16-17-18-19-20-21-22-23-
24-25-26-27-28
14
14-15-16-17
14-15-16-17-18-19-20-
21
14-15-16-17-18-19-20-21-22-23-24-
25-26-27-28-29
15
15-16-17-18
15-16-17-18-19-20-21-
22
15-16-17-18-19-20-21-22-23-24-25-
26-27-28-29-30
相關(guān)PDF資料
PDF描述
M30LW128D 128 Mbit (two 64Mbit, x8/x16, Uniform Block, Flash Memories) 3V Supply, Multiple Memory Product
M30LW128D110N1T 128 Mbit (two 64Mbit, x8/x16, Uniform Block, Flash Memories) 3V Supply, Multiple Memory Product
M30LW128D110N6T 128 Mbit (two 64Mbit, x8/x16, Uniform Block, Flash Memories) 3V Supply, Multiple Memory Product
M30LW128D110ZA1T 128 Mbit (two 64Mbit, x8/x16, Uniform Block, Flash Memories) 3V Supply, Multiple Memory Product
M30LW128D110ZA6T 128 Mbit (two 64Mbit, x8/x16, Uniform Block, Flash Memories) 3V Supply, Multiple Memory Product
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M30L0R8000B0ZAQ 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000B0ZAQE 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000B0ZAQF 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000B0ZAQT 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000T0 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory