參數(shù)資料
型號: M30L0R8000B0
廠商: 意法半導(dǎo)體
英文描述: 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
中文描述: 256兆位(16Mb的x16插槽,多銀行,多層次,多突發(fā))1.8V電源快閃記憶體
文件頁數(shù): 42/83頁
文件大?。?/td> 1363K
代理商: M30L0R8000B0
M30L0R8000T0, M30L0R8000B0
42/83
Table 22. DC Characteristics - Voltages
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
V
IL
Input Low Voltage
0
0.4
V
V
IH
Input High Voltage
V
DDQ
–0.4
V
DDQ
+ 0.4
V
V
OL
Output Low Voltage
I
OL
= 100μA
0.1
V
V
OH
Output High Voltage
I
OH
= –100μA
V
DDQ
–0.1
V
V
PP1
V
PP
Program Voltage-Logic
Program, Erase
1.3
1.8
3.3
V
V
PPH
V
PP
Program Voltage Factory
Program, Erase
8.5
9.0
9.5
V
V
PPLK
Program or Erase Lockout
0.4
V
V
LKO
V
DD
Lock Voltage
1
V
V
RPH
RP pin Extended High Voltage
3.3
V
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M30L0R8000B0ZAQ 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
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M30L0R8000B0ZAQF 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000B0ZAQT 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000T0 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory