- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄359054 > M30L0R7000T0ZAQT (意法半導(dǎo)體) CAP 0.22UF 50V 20% X7R DIP-2 BULK R-MIL-C-39014 PDF資料下載
參數(shù)資料
| 型號： | M30L0R7000T0ZAQT |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | CAP 0.22UF 50V 20% X7R DIP-2 BULK R-MIL-C-39014 |
| 中文描述： | 128兆位（8兆x16插槽，多銀行，多層次，多突發(fā)），1.8V電源快閃記憶體 |
| 文件頁數(shù)： | 69/83頁 |
| 文件大小： | 1329K |
| 代理商： | M30L0R7000T0ZAQT |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁當(dāng)前第69頁第70頁第71頁第72頁第73頁第74頁第75頁第76頁第77頁第78頁第79頁第80頁第81頁第82頁第83頁
69/83
M30L0R7000T0, M30L0R7000B0
APPENDIX C. FLOWCHARTS AND PSEUDO CODES
Figure 22. Program Flowchart and Pseudo Code
Note: 1. Status check of SR1 (Protected Block), SR3 (V
PP
Invalid) and SR4 (Program Error) can be made after each program operation or
after a sequence.
2. If an error is found, the Status Register must be cleared before further Program/Erase Controller operations.
3. Any address within the bank can equally be used.
Write 40h or 10h (3)
AI06170b
Start
Write Address
& Data
Read Status
Register (3)
YES
NO
SR7 = 1
YES
NO
SR3 = 0
NO
SR4 = 0
VPP Invalid
Error (1, 2)
Program
Error (1, 2)
program_command (addressToProgram, dataToProgram) {:
writeToFlash (addressToProgram, 0x40);
/*writeToFlash (addressToProgram, 0x10);*/
/*see note (3)*/
writeToFlash (addressToProgram, dataToProgram) ;
/*Memory enters read status state after
the Program Command*/
do {
status_register=readFlash (addressToProgram);
"see note (3)";
/* E or G must be toggled*/
} while (status_register.SR7== 0) ;
if (status_register.SR3==1) /*VPP invalid error */
error_handler ( ) ;
YES
End
YES
NO
SR1 = 0
Program to Protected
Block Error (1, 2)
if (status_register.SR4==1) /*program error */
error_handler ( ) ;
if (status_register.SR1==1) /*program to protect block error */
error_handler ( ) ;
}
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M30L0R7000B0ZAQT | CAP 0.047UF 100V 20% X7R DIP-2 BULK R-MIL-C-39014 |
| M30L0R8000T0ZAQ | 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L0R8000T0ZAQF | 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L0R8000T0ZAQT | 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L0R8000T0ZAQE | AB 35C 7#12,28#16 PIN RECP |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M30L0R7000XX | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory |
| M30L0R8000B0 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L0R8000B0ZAQ | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L0R8000B0ZAQE | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L0R8000B0ZAQF | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。