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參數(shù)資料
| 型號(hào)： | M30L0R7000T0ZAQ |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory |
| 中文描述： | 128兆位（8兆x16插槽，多銀行，多層次，多突發(fā)），1.8V電源快閃記憶體 |
| 文件頁(yè)數(shù)： | 9/83頁(yè) |
| 文件大小： | 1329K |
| 代理商： | M30L0R7000T0ZAQ |
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M30L0R7000T0, M30L0R7000B0
Table 2. Bank Architecture
Figure 4. Memory Map
Number
Bank Size
Parameter Blocks
Main Blocks
Parameter Bank
8 Mbits
4 blocks of 16 KWords
7 blocks of 64 KWords
Bank 1
8 Mbits
-
8 blocks of 64 KWords
Bank 2
8 Mbits
-
8 blocks of 64 KWords
Bank 3
8 Mbits
-
8 blocks of 64 KWords
-
-
-
-
Bank 14
8 Mbits
-
8 blocks of 64 KWords
Bank 15
8 Mbits
-
8 blocks of 64 KWords
AI08338
M30L0R7000T0 - Top Boot Block
Address lines A22-A0
8 Main
Blocks
Bank 15
M30L0R7000B0 - Bottom Boot Block
Address lines A22-A0
64 KWord
000000h
00FFFFh
64 KWord
070000h
07FFFFh
64 KWord
600000h
60FFFFh
64 KWord
670000h
67FFFFh
680000h
68FFFFh
64 KWord
64 KWord
6F0000h
6FFFFFh
700000h
70FFFFh
64 KWord
64 KWord
770000h
77FFFFh
780000h
78FFFFh
64 KWord
64 KWord
7E0000h
7EFFFFh
7F0000h
7F3FFFh
16 KWord
16 KWord
7FC000h
7FFFFFh
4 Parameter
Blocks
Parameter
Bank
Parameter
Bank
16 KWord
000000h
003FFFh
16 KWord
00C000h
00FFFFh
010000h
01FFFFh
64 KWord
64 KWord
070000h
07FFFFh
080000h
08FFFFh
64 KWord
64 KWord
0F0000h
0FFFFFh
100000h
10FFFFh
64 KWord
64 KWord
170000h
17FFFFh
180000h
18FFFFh
64 KWord
64 KWord
1F0000h
1FFFFFh
64 KWord
780000h
78FFFFh
64 KWord
7F0000h
7FFFFFh
Bank 3
Bank 2
Bank 1
Bank 15
Bank 3
Bank 2
Bank 1
8 Main
Blocks
8 Main
Blocks
8 Main
Blocks
7 Main
Blocks
4 Parameter
Blocks
7 Main
Blocks
8 Main
Blocks
8 Main
Blocks
8 Main
Blocks
8 Main
Blocks
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M30L0R7000xx | 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory |
| M30L0R7000B0 | 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory |
| M30L0R7000B0ZAQ | 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory |
| M30L0R7000B0ZAQE | 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory |
| M30L0R7000B0ZAQF | 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M30L0R7000T0ZAQE | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory |
| M30L0R7000T0ZAQF | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory |
| M30L0R7000T0ZAQT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory |
| M30L0R7000XX | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory |
| M30L0R8000B0 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
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