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參數(shù)資料
| 型號： | M30L0R7000T0ZAQ |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory |
| 中文描述： | 128兆位（8兆x16插槽，多銀行，多層次，多突發(fā)），1.8V電源快閃記憶體 |
| 文件頁數(shù)： | 76/83頁 |
| 文件大?。?/td> | 1329K |
| 代理商： | M30L0R7000T0ZAQ |
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M30L0R7000T0, M30L0R7000B0
76/83
Figure 29. Buffer Enhanced Factory Program Flowchart and Pseudo Code
Write 80h to
Address WA1
AI07302B
Start
Write D0h to
Address WA1
Write FFFFh to
Address = NOT WA1
Read Status
Register
SR7 = 0
NO
NO
SR0 = 0
YES
Read Status Register
SR3 and SR1for errors
Exit
Write PDX
Address WA1
Increment Count
X = X + 1
Initialize count
X = 0
X = 32
YES
Read Status
Register
Last data
YES
Read Status
Register
SR7 = 1
YES
Full Status Register
Check
End
YES
Buffer_Enhanced_Factory_Program_Command
(start_address, DataFlow[]) {
writeToFlash (start_address, 0x80) ;
writeToFlash (start_address, 0xD0) ;
do{
do {
status_register = readFlash (start_address);
if (status_register.SR4==1) { /*error*/
if (status_register.SR3==1) /*V
PP
error */
error_handler ( ) ;
if (status_register.SR1==1) /* Locked Block */
error_handler ( ) ;
}
while (status_register.SR7==1)
x=0; /* initialize count */
do {
writeToFlash (start_address, DataFlow[x]);
x++;
}while (x<32)
do {
status_register = readFlash (start_address);
}while (status_register.SR0==1)
} while (not last data)
writeToFlash (another_block_address, FFFFh)
do {
status_register = readFlash (start_address)
}while (status_register.SR7==0)
full_status_register_check();
SR4 = 1
NO
NO
NO
NO
SETUP PHASE
PROGRAM AND
VERIFY PHASE
EXIT PHASE
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M30L0R7000xx | 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory |
| M30L0R7000B0 | 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory |
| M30L0R7000B0ZAQ | 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory |
| M30L0R7000B0ZAQE | 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory |
| M30L0R7000B0ZAQF | 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M30L0R7000T0ZAQE | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory |
| M30L0R7000T0ZAQF | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory |
| M30L0R7000T0ZAQT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory |
| M30L0R7000XX | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory |
| M30L0R8000B0 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
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