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參數(shù)資料
| 型號： | M30L0R7000T0ZAQ |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory |
| 中文描述： | 128兆位（8兆x16插槽，多銀行，多層次，多突發(fā)），1.8V電源快閃記憶體 |
| 文件頁數(shù)： | 32/83頁 |
| 文件大?。?/td> | 1329K |
| 代理商： | M30L0R7000T0ZAQ |
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M30L0R7000T0, M30L0R7000B0
32/83
DUAL OPERATIONS AND MULTIPLE BANK ARCHITECTURE
The
Multiple
Bank
Architecture
M30L0R7000T0/B0 gives greater flexibility for
software developers to split the code and data
spaces within the memory array. The Dual Opera-
tions feature simplifies the software management
of the device by allowing code to be executed from
one bank while another bank is being programmed
or erased.
The Dual Operations feature means that while pro-
gramming or erasing in one bank, read operations
are possible in another bank with zero latency
(only one bank at a time is allowed to be in pro-
gram or erase mode).
If a read operation is required in a bank, which is
programming or erasing, the program or erase op-
eration can be suspended.
of
the
Also if the suspended operation was erase then a
program command can be issued to another
block, so the device can have one block in Erase
Suspend mode, one programming and other
banks in read mode.
Bus Read operations are allowed in another bank
between setup and confirm cycles of program or
erase operations.
By using a combination of these features, read op-
erations are possible at any moment in the
M30L0R7000T0/B0 device.
Tables
12
and
13
show the dual operations possi-
ble in other banks and in the same bank.
Table 12. Dual Operations Allowed In Other Banks
Table 13. Dual Operations Allowed In Same Bank
Note: 1. Not allowed in the Block or Word that is being erased or programmed.
2. The Read Array command is accepted but the data output is not guaranteed until the Program or Erase has completed.
Status of bank
Commands allowed in another bank
Read
Array
Read
Status
Register
Read
CFI
Query
Read
Electronic
Signature
Program,
Buffer Program
Block
Erase
Program/
Erase
Suspend
Program/
Erase
Resume
Idle
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Programming
Yes
Yes
Yes
Yes
–
–
Yes
–
Erasing
Yes
Yes
Yes
Yes
–
–
Yes
–
Program Suspended
Yes
Yes
Yes
Yes
–
–
–
Yes
Erase Suspended
Yes
Yes
Yes
Yes
Yes
–
–
Yes
Status of bank
Commands allowed in same bank
Read
Array
Read
Status
Register
Read
CFI Query
Read
Electronic
Signature
Program,
Buffer
Program
Block
Erase
Program/
Erase
Suspend
Program/
Erase
Resume
Idle
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Programming
–
(2)
Yes
Yes
Yes
–
–
Yes
–
Erasing
–
(2)
Yes
Yes
Yes
–
–
Yes
–
Program Suspended
Yes
(1)
Yes
Yes
Yes
–
–
–
Yes
Erase Suspended
Yes
(1)
Yes
Yes
Yes
Yes
(1)
–
–
Yes
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M30L0R7000xx | 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory |
| M30L0R7000B0 | 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory |
| M30L0R7000B0ZAQ | 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory |
| M30L0R7000B0ZAQE | 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory |
| M30L0R7000B0ZAQF | 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M30L0R7000T0ZAQE | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory |
| M30L0R7000T0ZAQF | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory |
| M30L0R7000T0ZAQT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory |
| M30L0R7000XX | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory |
| M30L0R8000B0 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
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