參數(shù)資料
型號(hào)： M30L0R7000B0
廠商： 意法半導(dǎo)體
英文描述： 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
中文描述： 128兆位（8兆x16插槽，多銀行，多層次，多突發(fā)），1.8V電源快閃記憶體
文件頁(yè)數(shù)： 1/83頁(yè)
文件大?。?/td> 1329K
代理商： M30L0R7000B0
1/83
December 2004
M30L0R7000T0
M30L0R7000B0
128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst)
1.8V Supply Flash Memory
FEATURES SUMMARY
SUPPLY VOLTAGE
–
V
DD
= 1.7V to 2.0V for program, erase and
read
–
V
DDQ
= 1.7V to 2.0V for I/O Buffers
–
V
PP
= 9V for fast program (12V tolerant)
SYNCHRONOUS / ASYNCHRONOUS READ
–
Synchronous Burst Read mode: 54MHz
–
Asynchronous Page Read mode
–
Random Access: 85ns
SYNCHRONOUS BURST READ SUSPEND
PROGRAMMING TIME
–
10μs typical Word program time using
Buffer Program
MEMORY ORGANIZATION
–
Multiple Bank Memory Array: 8 Mbit
Banks
–
Parameter Blocks (Top or Bottom
location)
DUAL OPERATIONS
–
program/erase in one Bank while read in
others
–
No delay between read and write
operations
BLOCK LOCKING
–
All blocks locked at power-up
–
Any combination of blocks can be locked
with zero latency
–
WP for Block Lock-Down
–
Absolute Write Protection with V
PP
= V
SS
SECURITY
–
64 bit unique device number
–
2112 bit user programmable OTP Cells
COMMON FLASH INTERFACE (CFI)
100,000 PROGRAM/ERASE CYCLES per
BLOCK
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■
■
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Figure 1. Package
■
ELECTRONIC SIGNATURE
–
Manufacturer Code: 20h
–
Top Device Code: 88C4h.
–
Bottom Device Code: 88C5h
■
PACKAGE
– Compliant with Lead-Free Soldering
Processes
– Lead-Free Versions
TFBGA88 (ZAQ)
8 x 10mm
FBGA
相關(guān)PDF資料
PDF描述
M30L0R7000B0ZAQ 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
M30L0R7000B0ZAQE 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
M30L0R7000B0ZAQF 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
M30L0R7000T0ZAQE AB 35C 7#12,28#16 PIN RECP
M30L0R7000T0ZAQF CAP 0.1UF 50V 10% X7R DIP-2 BULK R-MIL-C-39014
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M30L0R7000B0ZAQ 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
M30L0R7000B0ZAQE 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
M30L0R7000B0ZAQF 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
M30L0R7000B0ZAQT 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
M30L0R7000T0 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
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