參數(shù)資料
型號(hào): M30L0R7000B0
廠商: 意法半導(dǎo)體
英文描述: 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
中文描述: 128兆位(8兆x16插槽,多銀行,多層次,多突發(fā)),1.8V電源快閃記憶體
文件頁數(shù): 44/83頁
文件大小: 1329K
代理商: M30L0R7000B0
M30L0R7000T0, M30L0R7000B0
44/83
Figure 13. Single Synchronous Read AC Waveforms
AI08312
E
G
A0-A22
L
WAIT
(1,2)
K
(2)
VALID ADDRESS
tGLQV
tAVKH
tLLKH
tELKH
Hi-Z
tELQX
tKHQV
Note 1. The WAIT signal is configured to be active during wait state. WAIT signal is active Low.
2. Address latched and data output on the rising clock edge. Either the rising or the falling edge of the clock signal, K, can
be configured as the active edge. Here, the active edge is the rising one.
tGLQX
tKHTV
DQ0-DQ15
VALID
Hi-Z
tELQV
tGLTV
tGHTZ
相關(guān)PDF資料
PDF描述
M30L0R7000B0ZAQ 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
M30L0R7000B0ZAQE 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
M30L0R7000B0ZAQF 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
M30L0R7000T0ZAQE AB 35C 7#12,28#16 PIN RECP
M30L0R7000T0ZAQF CAP 0.1UF 50V 10% X7R DIP-2 BULK R-MIL-C-39014
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M30L0R7000B0ZAQ 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
M30L0R7000B0ZAQE 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
M30L0R7000B0ZAQF 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
M30L0R7000B0ZAQT 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
M30L0R7000T0 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory