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參數(shù)資料
| 型號： | M30L0R7000B0 |
| 廠商： | 意法半導體 |
| 英文描述： | 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory |
| 中文描述： | 128兆位（8兆x16插槽，多銀行，多層次，多突發(fā)），1.8V電源快閃記憶體 |
| 文件頁數(shù)： | 62/83頁 |
| 文件大?。?/td> | 1329K |
| 代理商： | M30L0R7000B0 |
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M30L0R7000T0, M30L0R7000B0
62/83
Table 33. CFI Query System Interface Information
Offset
Data
Description
Value
01Bh
0017h
V
DD
Logic Supply Minimum Program/Erase or Write voltage
bit 7 to 4
BCD value in volts
bit 3 to 0
BCD value in 100 millivolts
1.7V
01Ch
0020h
V
DD
Logic Supply Maximum Program/Erase or Write voltage
bit 7 to 4
BCD value in volts
bit 3 to 0
BCD value in 100 millivolts
2V
01Dh
0085h
V
PP
[Programming] Supply Minimum Program/Erase voltage
bit 7 to 4
HEX value in volts
bit 3 to 0
BCD value in 100 millivolts
8.5V
01Eh
0095h
V
PP
[Programming] Supply Maximum Program/Erase voltage
bit 7 to 4
HEX value in volts
bit 3 to 0
BCD value in 100 millivolts
9.5V
01Fh
0004h
Typical time-out per single byte/word program = 2
n
μs
16μs
020h
0009h
Typical time-out for Buffer Program = 2
n
μs
512μs
021h
000Bh
Typical time-out per individual block erase = 2
n
ms
2s
022h
0000h
Typical time-out for full chip erase = 2
n
ms
NA
023h
0003h
Maximum time-out for word program = 2
n
times typical
128μs
024h
0001h
Maximum time-out for Buffer Program = 2
n
times typical
1024μs
025h
0001h
Maximum time-out per individual block erase = 2
n
times typical
4s
026h
0000h
Maximum time-out for chip erase = 2
n
times typical
NA
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PDF描述 |
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| M30L0R7000B0ZAQ | 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory |
| M30L0R7000B0ZAQE | 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory |
| M30L0R7000B0ZAQF | 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory |
| M30L0R7000T0ZAQE | AB 35C 7#12,28#16 PIN RECP |
| M30L0R7000T0ZAQF | CAP 0.1UF 50V 10% X7R DIP-2 BULK R-MIL-C-39014 |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| M30L0R7000B0ZAQ | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory |
| M30L0R7000B0ZAQE | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory |
| M30L0R7000B0ZAQF | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory |
| M30L0R7000B0ZAQT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory |
| M30L0R7000T0 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory |
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