參數(shù)資料
型號: M30L0R7000B0
廠商: 意法半導體
英文描述: 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
中文描述: 128兆位(8兆x16插槽,多銀行,多層次,多突發(fā)),1.8V電源快閃記憶體
文件頁數(shù): 57/83頁
文件大小: 1329K
代理商: M30L0R7000B0
57/83
M30L0R7000T0, M30L0R7000B0
APPENDIX A. BLOCK ADDRESS TABLES
Table 29. Top Boot Block Addresses,
M30L0R7000T0
Size
(KWord)
0
16
1
16
2
16
3
16
4
64
5
64
6
64
7
64
8
64
9
64
10
64
11
64
12
64
13
64
14
64
15
64
16
64
17
64
18
64
19
64
20
64
21
64
22
64
23
64
24
64
25
64
26
64
27
64
28
64
29
64
30
64
31
64
32
64
33
64
34
64
Bank
#
Address Range
P
7FC000-7FFFFF
7F8000-7FBFFF
7F4000-7F7FFF
7F0000-7F3FFF
7E0000-7EFFFF
7D0000-7DFFFF
7C0000-7CFFFF
7B0000-7BFFFF
7A0000-7AFFFF
790000-79FFFF
780000-78FFFF
770000-77FFFF
760000-76FFFF
750000-75FFFF
740000-74FFFF
730000-73FFFF
720000-72FFFF
710000-71FFFF
700000-70FFFF
6F0000-6FFFFF
6E0000-6EFFFF
6D0000-6DFFFF
6C0000-6CFFFF
6B0000-6BFFFF
6A0000-6AFFFF
690000-69FFFF
680000-68FFFF
670000-67FFFF
660000-66FFFF
650000-65FFFF
640000-64FFFF
630000-63FFFF
620000-62FFFF
610000-61FFFF
600000-60FFFF
B
B
B
B
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
5F0000-5FFFFF
5E0000-5EFFFF
5D0000-5DFFFF
5C0000-5CFFFF
5B0000-5BFFFF
5A0000-5AFFFF
590000-59FFFF
580000-58FFFF
570000-57FFFF
560000-56FFFF
550000-55FFFF
540000-54FFFF
530000-53FFFF
520000-52FFFF
510000-51FFFF
500000-50FFFF
4F0000-4FFFFF
4E0000-4EFFFF
4D0000-4DFFFF
4C0000-4CFFFF
4B0000-4BFFFF
4A0000-4AFFFF
490000-49FFFF
480000-48FFFF
470000-47FFFF
460000-46FFFF
450000-45FFFF
440000-44FFFF
430000-43FFFF
420000-42FFFF
410000-41FFFF
400000-40FFFF
3F0000-3FFFFF
3E0000-3EFFFF
3D0000-3DFFFF
3C0000-3CFFFF
3B0000-3BFFFF
3A0000-3AFFFF
390000-39FFFF
380000-38FFFF
B
B
B
B
相關(guān)PDF資料
PDF描述
M30L0R7000B0ZAQ 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
M30L0R7000B0ZAQE 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
M30L0R7000B0ZAQF 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
M30L0R7000T0ZAQE AB 35C 7#12,28#16 PIN RECP
M30L0R7000T0ZAQF CAP 0.1UF 50V 10% X7R DIP-2 BULK R-MIL-C-39014
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M30L0R7000B0ZAQ 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
M30L0R7000B0ZAQE 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
M30L0R7000B0ZAQF 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
M30L0R7000B0ZAQT 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
M30L0R7000T0 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory