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參數資料
| 型號： | M30L0R7000T0ZAQ |
| 廠商： | 意法半導體 |
| 英文描述： | 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory |
| 中文描述： | 128兆位（8兆x16插槽，多銀行，多層次，多突發(fā)），1.8V電源快閃記憶體 |
| 文件頁數： | 16/83頁 |
| 文件大?。?/td> | 1329K |
| 代理商： | M30L0R7000T0ZAQ |
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M30L0R7000T0, M30L0R7000B0
16/83
–
Read CFI Query.
Additionally, if the suspended operation was erase
then the following commands are also accepted:
–
Clear Status Register
–
Program (except in erase-suspended
block)
–
Block Lock
–
Block Lock-Down
–
Block Unlock.
During an erase suspend the block being erased
can be protected by issuing the Block Lock or
Block Lock-Down commands. When the Program/
Erase Resume command is issued the operation
will complete.
It is possible to accumulate multiple suspend oper-
ations. For example: suspend an erase operation,
start a program operation, suspend the program
operation, then read the array.
If a Program command is issued during a Block
Erase Suspend, the erase operation cannot be re-
sumed until the program operation has completed.
The Program/Erase Suspend command does not
change the read mode of the banks. If the sus-
pended bank was in Read Status Register, Read
Electronic signature or Read CFI Query mode the
bank remains in that mode and outputs the corre-
sponding data.
Refer to Dual Operations section for detailed infor-
mation about simultaneous operations allowed
during Program/Erase Suspend.
During a Program/Erase Suspend, the device can
be placed in standby mode by taking Chip Enable
to V
IH
. Program/erase is aborted if Reset, RP,
goes to V
IL
.
See
APPENDIX C.
,
Figure 24., Program Suspend
& Resume Flowchart and Pseudo Code
, and
Fig-
ure 26., Erase Suspend & Resume Flowchart and
Pseudo Code
, for flowcharts for using the Pro-
gram/Erase Suspend command.
Program/Erase Resume Command
The Program/Erase Resume command is used to
restart the program or erase operation suspended
by the Program/Erase Suspend command. One
Bus Write cycle is required to issue the command.
The command can be issued to any address.
The Program/Erase Resume command does not
change the read mode of the banks. If the sus-
pended bank was in Read Status Register, Read
Electronic signature or Read CFI Query mode the
bank remains in that mode and outputs the corre-
sponding data.
If a Program command is issued during a Block
Erase Suspend, then the erase cannot be re-
sumed until the program operation has completed.
See
APPENDIX C.
,
Figure 24., Program Suspend
& Resume Flowchart and Pseudo Code
, and
Fig-
ure 26., Erase Suspend & Resume Flowchart and
Pseudo Code
, for flowcharts for using the Pro-
gram/Erase Resume command.
Protection Register Program Command
The Protection Register Program command is
used to program the user One-Time-Programma-
ble (OTP) segments of the Protection Register and
the two Protection Register Locks.
The device features 16 OTP segments of 128 bits
and one OTP segment of 64 bits, as shown in
Fig-
ure 5., Protection Register Memory Map
.
The segments are programmed one Word at a
time. When shipped all bits in the segment are set
to ‘1’. The user can only program the bits to ‘0’.
Two Bus Write cycles are required to issue the
Protection Register Program command.
The first bus cycle sets up the Protection
Register Program command.
The second latches the address and data to
be programmed to the Protection Register and
starts the Program/Erase Controller.
Read operations to the bank being programmed
output the Status Register content after the pro-
gram operation has started.
Attempting to program a previously protected Pro-
tection Register will result in a Status Register er-
ror.
The Protection Register Program cannot be sus-
pended.
The two Protection Register Locks are used to
protect the OTP segments from further modifica-
tion. The protection of the OTP segments is not re-
versible. Refer to
Figure 5., Protection Register
Memory Map
, and
Table 8., Protection Register
Locks
, for details on the Lock bits.
See
APPENDIX C.
,
Figure 28., Protection Regis-
ter Program Flowchart and Pseudo Code
, for a
flowchart for using the Protection Register Pro-
gram command.
Set Configuration Register Command
The Set Configuration Register command is used
to write a new value to the Configuration Register.
Two Bus Write cycles are required to issue the Set
Configuration Register command.
The first cycle sets up the Set Configuration
Register command and the address
corresponding to the Configuration Register
content.
The second cycle writes the Configuration
Register data and the confirm command.
The Configuration Register data must be written
as an address during the bus write cycles, that is
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相關PDF資料 |
PDF描述 |
|---|---|
| M30L0R7000xx | 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory |
| M30L0R7000B0 | 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory |
| M30L0R7000B0ZAQ | 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory |
| M30L0R7000B0ZAQE | 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory |
| M30L0R7000B0ZAQF | 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory |
相關代理商/技術參數 |
參數描述 |
|---|---|
| M30L0R7000T0ZAQE | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory |
| M30L0R7000T0ZAQF | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory |
| M30L0R7000T0ZAQT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory |
| M30L0R7000XX | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory |
| M30L0R8000B0 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
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