參數(shù)資料
型號(hào)： M30L0R7000T0
廠商： 意法半導(dǎo)體
英文描述： 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
中文描述： 128兆位（8兆x16插槽，多銀行，多層次，多突發(fā)），1.8V電源快閃記憶體
文件頁數(shù)： 68/83頁
文件大小： 1329K
代理商： M30L0R7000T0
M30L0R7000T0, M30L0R7000B0
68/83
Note: 1. The variable P is a pointer which is defined at CFI offset 15h.
2. Bank Regions. There are two Bank Regions, There are two Bank Regions, see
Table 29.
and
Table 30.
(P+3C)h = 146h
64h
(P+44)h = 14Eh
64h
Bank Region 2 (Erase Block Type 1)
Minimum block erase cycles × 1000
(P+3D)h = 147h
00h
(P+45)h = 14Fh
00h
(P+3E)h = 148h
02h
(P+46)h = 150h
02h
Bank Region 2 (Erase Block Type 1): BIts per cell, internal
ECC
Bits 0-3: bits per cell in erase region
Bit 4: reserved for “internal ECC used”
BIts 5-7: reserved
(P+3F)h = 149h
03h
(P+47)h = 151h
03h
Bank Region 2 (Erase Block Type 1):Page mode and
Synchronous mode capabilities (defined in
Table 37.
)
Bit 0: Page-mode reads permitted
Bit 1: Synchronous reads permitted
Bit 2: Synchronous writes permitted
Bits 3-7: reserved
(P+40)h = 14Ah
03h
Bank Region 2 Erase Block Type 2 Information
Bits 0-15: n+1 = number of identical-sized erase blocks
Bits 16-31: n×256 = number of bytes in erase block region
(P+41)h = 14Bh
00h
(P+42)h = 14Ch
80h
(P+43)h = 14Dh
00h
(P+44)h =14Eh
64h
Bank Region 2 (Erase Block Type 2)
Minimum block erase cycles × 1000
(P+45)h = 14Fh
00h
(P+46)h = 150h
02h
Bank Region 2 (Erase Block Type 2): BIts per cell, internal
ECC
Bits 0-3: bits per cell in erase region
Bit 4: reserved for “internal ECC used”
BIts 5-7: reserved
(P+47)h = 151h
03h
Bank Region 2 (Erase Block Type 2): Page mode and
Synchronous mode capabilities (defined in
Table 37.
)
Bit 0: Page-mode reads permitted
Bit 1: Synchronous reads permitted
Bit 2: Synchronous writes permitted
Bits 3-7: reserved
(P+48)h = 152h
(P+48)h = 152h
Feature Space definitions
(P+49)h = 153h
(P+43)h = 153h
Reserved
Flash memory (top)
Flash memory (bottom)
Description
Offset
Data
Offset
Data
相關(guān)PDF資料
PDF描述
M30L0R7000T0ZAQ 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
M30L0R7000xx 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
M30L0R7000B0 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
M30L0R7000B0ZAQ 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
M30L0R7000B0ZAQE 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M30L0R7000T0ZAQ 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
M30L0R7000T0ZAQE 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
M30L0R7000T0ZAQF 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
M30L0R7000T0ZAQT 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
M30L0R7000XX 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*