- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄359054 > M30L0R7000T0 (意法半導(dǎo)體) 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory PDF資料下載
參數(shù)資料
| 型號： | M30L0R7000T0 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory |
| 中文描述： | 128兆位（8兆x16插槽，多銀行，多層次，多突發(fā)），1.8V電源快閃記憶體 |
| 文件頁數(shù)： | 61/83頁 |
| 文件大?。?/td> | 1329K |
| 代理商： | M30L0R7000T0 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁當(dāng)前第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁第73頁第74頁第75頁第76頁第77頁第78頁第79頁第80頁第81頁第82頁第83頁
61/83
M30L0R7000T0, M30L0R7000B0
APPENDIX B. COMMON FLASH INTERFACE
The Common Flash Interface is a JEDEC ap-
proved, standardized data structure that can be
read from the Flash memory device. It allows a
system software to query the device to determine
various electrical and timing parameters, density
information and functions supported by the mem-
ory. The system can interface easily with the de-
vice, enabling the software to upgrade itself when
necessary.
When the Read CFI Query Command is issued
the device enters CFI Query mode and the data
structure is read from the memory. Tables
31
,
32
,
33
,
34
,
35
,
36
,
37
,
38
,
39
and
40
show the ad-
dresses used to retrieve the data. The Query data
is always presented on the lowest order data out-
puts (DQ0-DQ7), the other outputs (DQ8-DQ15)
are set to 0.
The CFI data structure also contains a security
area where a 64 bit unique security number is writ-
ten (see
Figure 5., Protection Register Memory
Map
). This area can be accessed only in Read
mode by the final user. It is impossible to change
the security number after it has been written by
ST. Issue a Read Array command to return to
Read mode.
Table 31. Query Structure Overview
Offset
000h
Reserved
010h
CFI Query Identification String
01Bh
System Interface Information
027h
Device Geometry Definition
Note: The Flash memory display the CFI data structure when CFI Query command is issued. In this table are listed the main sub-sections
detailed in Tables
32
,
33
,
34
, and
35
. Query data is always presented on the lowest order data outputs.
Table 32. CFI Query Identification String
Offset
Sub-section Name
000h
0020h
88C4h
88C5h
002h
Reserved
003h
Reserved
004h-00Fh
Reserved
010h
0051h
011h
0052h
012h
0059h
013h
0003h
014h
0000h
015h
offset = P = 000Ah
016h
0001h
017h
0000h
018h
0000h
019h
value = A = 0000h
01Ah
0000h
Sub-section Name
Description
Reserved for algorithm-specific information
Command set ID and algorithm data offset
Device timing & voltage information
Flash device layout
Additional information specific to the Primary
Algorithm (optional)
Additional information specific to the Alternate
Algorithm (optional)
Lock Protection Register
Unique device Number and
User Programmable OTP
P
Primary Algorithm-specific Extended Query table
A
Alternate Algorithm-specific Extended Query table
080h
Security Code Area
Description
Value
ST
Top
Bottom
Manufacturer Code
001h
Device Code
Reserved
Reserved
Reserved
Query Unique ASCII String "QRY"
"Q"
"R"
"Y"
Primary Algorithm Command Set and Control Interface ID code 16
bit ID code defining a specific algorithm
Address for Primary Algorithm extended Query table (see
Table
34.
)
p = 10Ah
Alternate Vendor Command Set and Control Interface ID Code
second vendor - specified algorithm supported
NA
Address for Alternate Algorithm extended Query table
NA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M30L0R7000T0ZAQ | 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory |
| M30L0R7000xx | 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory |
| M30L0R7000B0 | 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory |
| M30L0R7000B0ZAQ | 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory |
| M30L0R7000B0ZAQE | 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M30L0R7000T0ZAQ | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory |
| M30L0R7000T0ZAQE | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory |
| M30L0R7000T0ZAQF | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory |
| M30L0R7000T0ZAQT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory |
| M30L0R7000XX | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。