參數(shù)資料
型號(hào)： M30L0R7000T0
廠商： 意法半導(dǎo)體
英文描述： 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
中文描述： 128兆位（8兆x16插槽，多銀行，多層次，多突發(fā)），1.8V電源快閃記憶體
文件頁(yè)數(shù)： 17/83頁(yè)
文件大?。?/td> 1329K
代理商： M30L0R7000T0
17/83
M30L0R7000T0, M30L0R7000B0
A0 = CR0, A1 = CR1, …, A15 = CR15. Addresses
A16- A22 are ignored.
Once the Set Configuration Register command
has been issued, read operations will output the
array contents.
The Read Electronic Signature command is re-
quired to read the updated contents of the Config-
uration Register.
Block Lock Command
The Block Lock command is used to lock a block
and prevent program or erase operations from
changing the data in it. All blocks are locked after
power-up or reset.
Two Bus Write cycles are required to issue the
Block Lock command.
The first bus cycle sets up the Block Lock
command.
The second Bus Write cycle latches the block
address and locks the block.
The lock status can be monitored for each block
using the Read Electronic Signature command.
Table 14.
shows the Lock Status after issuing a
Block Lock command.
Once set, the Block Lock bits remain set until a
hardware reset or power-down/power-up. They
are cleared by a Block Unlock command.
Refer to the section, Block Locking, for a detailed
explanation.
See
APPENDIX
27., Locking Operations Flowchart and Pseudo
Code
, for a flowchart for using the Lock command.
Block Unlock Command
The Block Unlock command is used to unlock a
block, allowing the block to be programmed or
erased.
Two Bus Write cycles are required to issue the
Block Unlock command.
The first bus cycle sets up the Block Unlock
command.
■
■
C.
,
Figure
■
■
The second Bus Write cycle latches the block
address and unlocks the block.
The lock status can be monitored for each block
using the Read Electronic Signature command.
Table 14.
shows the protection status after issuing
a Block Unlock command.
Refer to the section, Block Locking, for a detailed
explanation
and
APPENDIX
27., Locking Operations Flowchart and Pseudo
Code
, for a flowchart for using the Block Unlock
command.
Block Lock-Down Command
The Block Lock-Down command is used to lock-
down a locked or unlocked block.
A locked-down block cannot be programmed or
erased. The lock status of a locked-down block
cannot be changed when WP is low, V
IL
. When
WP is high, V
IH,
the lock-down function is disabled
and the locked blocks can be individually unlocked
by the Block Unlock command.
Two Bus Write cycles are required to issue the
Block Lock-Down command.
The first bus cycle sets up the Block Lock-
Down command.
The second Bus Write cycle latches the block
address and locks-down the block.
The lock status can be monitored for each block
using the Read Electronic Signature command.
Locked-Down blocks revert to the locked (and not
locked-down) state when the device is reset on
power-down.
Table 14.
shows the Lock Status af-
ter issuing a Block Lock-Down command.
Refer to the section, Block Locking, for a detailed
explanation
and
APPENDIX
27., Locking Operations Flowchart and Pseudo
Code
, for a flowchart for using the Lock-Down
command.
C.
,
Figure
■
■
C.
,
Figure
相關(guān)PDF資料
PDF描述
M30L0R7000T0ZAQ 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
M30L0R7000xx 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
M30L0R7000B0 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
M30L0R7000B0ZAQ 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
M30L0R7000B0ZAQE 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M30L0R7000T0ZAQ 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
M30L0R7000T0ZAQE 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
M30L0R7000T0ZAQF 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
M30L0R7000T0ZAQT 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
M30L0R7000XX 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
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