參數(shù)資料
型號: M30L0R7000T0
廠商: 意法半導體
英文描述: 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
中文描述: 128兆位(8兆x16插槽,多銀行,多層次,多突發(fā)),1.8V電源快閃記憶體
文件頁數(shù): 21/83頁
文件大小: 1329K
代理商: M30L0R7000T0
21/83
M30L0R7000T0, M30L0R7000B0
Table 8. Protection Register Locks
Lock
Description
Number
Address
Bits
Lock 1
80h
Bit 0
preprogrammed to protect Unique Device Number, address 81h to
84h in PR0
Bit 1
protects 64bits of OTP segment, address 85h to 88h in PR0
Bits 2 to 15
reserved
Lock 2
89h
Bit 0
protects 128bits of OTP segment PR1
Bit 1
protects 128bits of OTP segment PR2
Bit 2
protects 128bits of OTP segment PR3
-
-
Bit 13
protects 128bits of OTP segment PR14
Bit 14
protects 128bits of OTP segment PR15
Bit 15
protects 128bits of OTP segment PR16
相關PDF資料
PDF描述
M30L0R7000T0ZAQ 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
M30L0R7000xx 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
M30L0R7000B0 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
M30L0R7000B0ZAQ 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
M30L0R7000B0ZAQE 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
相關代理商/技術(shù)參數(shù)
參數(shù)描述
M30L0R7000T0ZAQ 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
M30L0R7000T0ZAQE 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
M30L0R7000T0ZAQF 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
M30L0R7000T0ZAQT 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
M30L0R7000XX 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory