參數(shù)資料
型號(hào): M30L0R7000B0ZAQT
廠商: 意法半導(dǎo)體
英文描述: CAP 0.047UF 100V 20% X7R DIP-2 BULK R-MIL-C-39014
中文描述: 128兆位(8兆x16插槽,多銀行,多層次,多突發(fā)),1.8V電源快閃記憶體
文件頁數(shù): 81/83頁
文件大?。?/td> 1329K
代理商: M30L0R7000B0ZAQT
81/83
M30L0R7000T0, M30L0R7000B0
Table 44. Command Interface States - Lock Table, Next Output State
Note: 1. The output state shows the type of data that appears at the outputs if the bank address is the same as the command address. A
bank can be placed in Read Array, Read Status Register, Read Electronic Signature or Read CFI mode, depending on the com-
mand issued. Each bank remains in its last output state until a new command is issued to that bank. The next state does not depend
on the bank's output state.
2. CI = Command Interface, CR = Configuration Register, BEFP = Buffer Enhanced Factory Program, P/E. C. = Program/Erase Con-
troller, WA0 = Address in a block different from first BEFP address.
3. If the P/E.C. is active, both cycles are ignored.
4. BEFP Exit when Block Address is different from first Block Address and data are FFFFh.
5. Illegal commands are those not defined in the command set.
Current CI State
Command Input
Block
Lock-Down
Confirm
(2Fh)
Lock/CR
Setup
(3)
(60h)
OTP
Setup
(3)
(C0h)
Block Lock
Confirm
(01h)
Set CR
Confirm
(03h)
BEFP Exit
(4)
(FFFFh)
Illegal
Command
(5)
WSM
Operation
Completed
Program Setup
Erase Setup
OTP Setup
Program in Erase
Suspend
BEFP Setup
BEFP Busy
Buffer Program
Setup
Buffer Program
Load 1
Buffer Program
Load 2
Buffer Program
Confirm
Buffer Program
Setup in Erase
Suspend
Buffer Program
Load 1 in Erase
Suspend
Buffer Program
Load 2 in Erase
Suspend
Buffer Program
Confirm in Erase
Suspend
Lock/CR Setup
Lock/CR Setup in
Erase Suspend
OTP Busy
Ready
Program Busy
Erase Busy
Buffer Program
Busy
Program/Erase
Suspend
Buffer Program
Suspend
Program Busy in
Erase Suspend
Buffer Program
Busy in Erase
Suspend
Program Suspend in
Erase Suspend
Buffer Program
Suspend in Erase
Suspend
Status Register
Output
Unchanged
Status Register
Array
Status Register
Status
Register
Output Unchanged
Array
Output
Unchanged
相關(guān)PDF資料
PDF描述
M30L0R8000T0ZAQ 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000T0ZAQF 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000T0ZAQT 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000T0ZAQE AB 35C 7#12,28#16 PIN RECP
M30L0R8000B0ZAQE 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M30L0R7000T0 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
M30L0R7000T0ZAQ 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
M30L0R7000T0ZAQE 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
M30L0R7000T0ZAQF 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
M30L0R7000T0ZAQT 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory