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參數(shù)資料
| 型號(hào)： | M30L0R7000B0ZAQT |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | CAP 0.047UF 100V 20% X7R DIP-2 BULK R-MIL-C-39014 |
| 中文描述： | 128兆位（8兆x16插槽，多銀行，多層次，多突發(fā)），1.8V電源快閃記憶體 |
| 文件頁(yè)數(shù)： | 24/83頁(yè) |
| 文件大小： | 1329K |
| 代理商： | M30L0R7000B0ZAQT |
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M30L0R7000T0, M30L0R7000B0
24/83
Table 9. Status Register Bits
Note: Logic level '1' is High, '0' is Low.
Bit
Name
Type
Logic Level
Definition
SR7
P/E.C. Status
Status
'1'
Ready
'0'
Busy
SR6
Erase Suspend Status
Status
'1'
Erase Suspended
'0'
Erase In progress or Completed
SR5
Erase Status
Error
'1'
Erase Error
'0'
Erase Success
SR4
Program Status
Error
'1'
Program Error
'0'
Program Success
SR3
V
PP
Status
Error
'1'
V
PP
Invalid, Abort
'0'
V
PP
OK
SR2
Program Suspend Status
Status
'1'
Program Suspended
'0'
Program In Progress or Completed
SR1
Block Protection Status
Error
'1'
Program/Erase on protected Block, Abort
'0'
No operation to protected blocks
SR0
Bank Write Status
Status
'1'
SR7 = ‘1’
Not Allowed
SR7 = ‘0’
Program or erase operation in a bank other than
the addressed bank
'0'
SR7 = ‘1’
No Program or erase operation in the device
SR7 = ‘0’
Program or erase operation in addressed bank
Multiple Word Program
Status (Buffer Enhanced
Factory Program mode)
Status
'1'
SR7 = ‘1’
Not Allowed
SR7 = ‘0’
the device is NOT ready for the next Word
'0'
SR7 = ‘1’
the device is exiting from BEFP
SR7 = ‘0’
the device is ready for the next Word
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M30L0R8000T0ZAQ | 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L0R8000T0ZAQF | 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L0R8000T0ZAQT | 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L0R8000T0ZAQE | AB 35C 7#12,28#16 PIN RECP |
| M30L0R8000B0ZAQE | 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M30L0R7000T0 | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory |
| M30L0R7000T0ZAQ | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory |
| M30L0R7000T0ZAQE | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory |
| M30L0R7000T0ZAQF | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory |
| M30L0R7000T0ZAQT | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory |
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