參數(shù)資料
型號： M30L0R7000B0ZAQT
廠商： 意法半導體
英文描述： CAP 0.047UF 100V 20% X7R DIP-2 BULK R-MIL-C-39014
中文描述： 128兆位（8兆x16插槽，多銀行，多層次，多突發(fā)），1.8V電源快閃記憶體
文件頁數(shù)： 23/83頁
文件大小： 1329K
代理商： M30L0R7000B0ZAQT
23/83
M30L0R7000T0, M30L0R7000B0
Program Suspend Status Bit (SR2).
The Pro-
gram Suspend Status bit indicates that a program
operation has been suspended in the addressed
block. The Program Suspend Status bit should
only be considered valid when the Program/Erase
Controller Status bit is High (Program/Erase Con-
troller inactive).
When the Program Suspend Status bit is High (set
to ‘1’), a Program/Erase Suspend command has
been issued and the memory is waiting for a Pro-
gram/Erase Resume command.
SR2 is set within the Program Suspend Latency
time of the Program/Erase Suspend command be-
ing issued therefore the memory may still com-
plete the operation rather than entering the
Suspend mode.
When a Program/Erase Resume command is is-
sued the Program Suspend Status bit returns Low.
Block Protection Status Bit (SR1).
The
Protection Status bit is used to identify if a Pro-
gram or Block Erase operation has tried to modify
the contents of a locked block.
When the Block Protection Status bit is High (set
to ‘1’), a program or erase operation has been at-
tempted on a locked block.
Once set High, the Block Protection Status bit
must be set Low by a Clear Status Register com-
mand or a hardware reset before a new program
Block
or erase command is issued, otherwise the new
command will appear to fail.
Bank Write/Multiple Word Program Status Bit
(SR0).
The Bank Write Status bit indicates wheth-
er the addressed bank is programming or erasing.
In Buffer Enhanced Factory Program mode the
Multiple Word Program bit shows if the device is
ready to accept a new Word to be programmed to
the memory array.
The Bank Write Status bit should only be consid-
ered valid when the Program/Erase Controller Sta-
tus SR7 is Low (set to ‘0’).
When both the Program/Erase Controller Status bit
and the Bank Write Status bit are Low (set to ‘0’),
the addressed bank is executing a program or
erase operation. When the Program/Erase Con-
troller Status bit is Low (set to ‘0’) and the Bank
Write Status bit is High (set to ‘1’), a program or
erase operation is being executed in a bank other
than the one being addressed.
In Buffer Enhanced Factory Program mode if Mul-
tiple Word Program Status bit is Low (set to ‘0’),
the device is ready for the next Word, if the Multi-
ple Word Program Status bit is High (set to ‘1’) the
device is not ready for the next Word.
For further details on how to use the Status Regis-
ter, see the Flowcharts and Pseudocodes provid-
ed in
APPENDIX C.
相關PDF資料
PDF描述
M30L0R8000T0ZAQ 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000T0ZAQF 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000T0ZAQT 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000T0ZAQE AB 35C 7#12,28#16 PIN RECP
M30L0R8000B0ZAQE 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
相關代理商/技術參數(shù)
參數(shù)描述
M30L0R7000T0 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
M30L0R7000T0ZAQ 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
M30L0R7000T0ZAQE 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
M30L0R7000T0ZAQF 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
M30L0R7000T0ZAQT 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
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