參數(shù)資料
型號(hào): M2V56S30TP-8
廠商: Mitsubishi Electric Corporation
英文描述: 256M Synchronous DRAM
中文描述: 256M同步DRAM
文件頁(yè)數(shù): 45/49頁(yè)
文件大?。?/td> 244K
代理商: M2V56S30TP-8
Feb.2000
MITSUBISHI LSIs
MITSUBISHI ELECTRIC
SDRAM (Rev.1.1)
Single Data Rate
M2V56S20/ 30/ 40/ TP -6, -7, -8
256M Synchronous DRAM
45
Self Refresh
CLK
/CS
/RAS
/CAS
/WE
CKE
DQM
A0-9,11
A10
A12
BA0,1
DQ
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
Italic paramater
shows minimum case
PRE ALL Self Refresh Entry
Self Refresh Exit
X
X
X
0
ACT#0
tRP
All banks must be idle before REFS is issued.
tRFC
相關(guān)PDF資料
PDF描述
M2V56S40TP 256M Synchronous DRAM
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參數(shù)描述
M2V56S40AKT 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:256M Synchronous DRAM
M2V56S40AKT-5 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:256M Synchronous DRAM
M2V56S40AKT-6 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:256M Synchronous DRAM
M2V56S40AKT-7 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:256M Synchronous DRAM
M2V56S40ATP 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:256M Synchronous DRAM