參數(shù)資料
型號： M2V56S30TP-8
廠商： Mitsubishi Electric Corporation
英文描述： 256M Synchronous DRAM
中文描述： 256M同步DRAM
文件頁數(shù)： 21/49頁
文件大?。?/td> 244K
代理商： M2V56S30TP-8
Feb.2000
MITSUBISHI LSIs
MITSUBISHI ELECTRIC
SDRAM (Rev.1.1)
Single Data Rate
M2V56S20/ 30/ 40/ TP -6, -7, -8
256M Synchronous DRAM
21
[ Write Interrupted by Write ]
Burst write operation can be interrupted by new write of any active bank. Random column access is
allowed. WRITE to WRITE interval is minimum 1 CLK.
Write interrupted by Write (BL=4)
[ Write Interrupted by Read ]
Burst write operation can be interrupted by read of any active bank. Random column access is allowed.
WRITE to READ interval is minimum 1 CLK. The input data on DQ at the interrupting READ cycle is
"Don't Care".
CLK
Command
A0-9,11-12
A10
BA0-1
DQ
Write
Yb
0
00
Dc0
Dc1
Dc2
Dc3
Write
Ya
0
00
Da0
Da1
Da2
Db0
Write
Yc
0
10
CLK
Command
A0-9,11-12
A10
BA0-1
DQ
ACT
Xa
Xa
00
Write interrupted by Read (CL=2, BL=4)
READ
Yb
0
00
Da0
Da1
Qb0
Write
Ya
0
00
Qb1
Qb2
Qb3
don't care
相關(guān)PDF資料
PDF描述
M2V56S40TP 256M Synchronous DRAM
M2V56S40TP-8 256M Synchronous DRAM
M2V56S20AKT 256M Synchronous DRAM
M2V56S20ATP 256M Synchronous DRAM
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M2V56S40AKT 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:256M Synchronous DRAM
M2V56S40AKT-5 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:256M Synchronous DRAM
M2V56S40AKT-6 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:256M Synchronous DRAM
M2V56S40AKT-7 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:256M Synchronous DRAM
M2V56S40ATP 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:256M Synchronous DRAM
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