參數(shù)資料
型號: M2V28D20ATP-75
廠商: Mitsubishi Electric Corporation
英文描述: 128M Double Data Rate Synchronous DRAM
中文描述: 128M的雙數(shù)據(jù)速率同步DRAM
文件頁數(shù): 19/36頁
文件大?。?/td> 1216K
代理商: M2V28D20ATP-75
19
MITSUBISHI ELECTRIC
Jun,'00
Preliminary
MITSUBISHI LSIs
DDR SDRAM (Rev.0.1)
M2S28D20/ 30/ 40ATP
128M Double Data Rate Synchronous DRAM
AC TIMING REQUIREMENTS(Continues)
(Ta=0 ~ 70
o
C, Vdd = VddQ = 2.5V +0.2V, Vss = VssQ = 0V, unless otherwise noted)
Min.
45
Max
120,000
Min.
50
Max
120,000
tRAS
Row Active time
ns
tRC
Row Cycle time(operation)
65
70
ns
tRFC
Auto Ref. to Active/Auto Ref. command period
75
80
ns
tRCD
Row to Column Delay
20
20
ns
tRP
Row Precharge time
20
20
ns
tRRD
Act to Act Delay time
15
15
ns
tWR
Write Recovery time
15
15
ns
tDAL
Auto Precharge write recovery + precharge time
35
35
ns
tWTR
Internal Write to Read Command Delay
1
1
tCK
tXSNR Exit Self Ref. to non-Read command
75
80
ns
tXSRD
Exit Self Ref. to -Read command
200
200
tCK
tXPNR Exit Power down to command
1
1
tCK
tXPRD
Exit Power down to -Read command
1
1
tCK
18
tREFI
Average Periodic Refresh interval
15.6
15.6
μ
s
17
-10
Unit
Notes
Symbol
AC Characteristics Parameter
-75
Output Load Condition
DQ
Output Timing
Measurement
Reference Point
V
REF
V
REF
DQS
V
OUT
V
REF
30pF
50
V
TT
=V
REF
Zo=50
相關PDF資料
PDF描述
M2V28D30ATP-10 353620600
M2V28D30ATP-75 128M Double Data Rate Synchronous DRAM
M2V28D40ATP-10 128M Double Data Rate Synchronous DRAM
M2V28D40ATP-75 128M Double Data Rate Synchronous DRAM
M2S28D20ATP 128M Double Data Rate Synchronous DRAM
相關代理商/技術參數(shù)
參數(shù)描述
M2V28D30ATP-10 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:128M Double Data Rate Synchronous DRAM
M2V28D30ATP-75 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:128M Double Data Rate Synchronous DRAM
M2V28D40ATP-10 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:128M Double Data Rate Synchronous DRAM
M2V28D40ATP-75 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:128M Double Data Rate Synchronous DRAM
M2V28S20ATP 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:128M Synchronous DRAM