參數(shù)資料
型號： M25P40-VMN6TG/X
廠商： NUMONYX
元件分類： PROM
英文描述： 512K X 8 SPI BUS SERIAL EEPROM, PDSO8
封裝： 0.150 INCH, ROHS COMPLIANT, PLASTIC, SOP-8
文件頁數(shù)： 50/57頁
文件大小： 1160K
代理商： M25P40-VMN6TG/X
Revision history
M25P40
54/57
13
Revision history
Table 28.
Document revision history
Date
Revision
Changes
12-Apr-2001
1.0
Document written.
25-May-2001
1.1
Serial Paged Flash Memory renamed as Serial Flash Memory.
11-Sep-2001
1.2
Changes to text: Signal Description/Chip Select; Hold Condition/1st para; Protection
modes; Release from Power-down and Read Electronic Signature (RES); Power-
up.
Repositioning of several tables and illustrations without changing their contents.
Power-up timing illustration; SO8W package removed.
Changes to tables: Abs Max Ratings/VIO; DC Characteristics/VIL.
16-Jan-2002
1.3
FAST_READ instruction added. Document revised with new timings, VWI, ICC3 and
clock slew rate. Descriptions of Polling, Hold Condition, Page Programming,
Release for Deep Power-down made more precise. Value of tW(max) modified.
12-Sep-2002
1.4
Clarification of descriptions of entering Standby Power mode from Deep Power-
down mode, and of terminating an instruction sequence or data-out sequence.
VFQFPN8 package (MLP8) added. Document promoted to Preliminary Data.
13-Dec-2002
1.5
Typical Page Program time improved. Deep Power-down current changed. Write
Protect setup and hold times specified, for applications that switch Write Protect to
exit the Hardware Protection mode immediately before a WRSR, and to enter the
Hardware Protection mode again immediately after.
12-Jun-2003
1.6
Document promoted from Preliminary Data to full Datasheet.
24-Nov-2003
2.0
Table of contents, warning about exposed paddle on MLP8, and Pb-free options
added.
40 MHz AC Characteristics table included as well as 25 MHz. ICC3(max), tSE(typ)
and tBE(typ) values improved. Change of naming for VDFPN8 package.
12-Mar-2004
3.0
Automotive range added. Soldering temperature information clarified for RoHS
compliant devices.
05-Aug-2004
4.0
Device grade information clarified. Data-retention measurement temperature
corrected. Details of how to find the date of marking added.
03-Jan-2005
5.0
Small text changes. Notes 2 and 3 removed from Table 27: Ordering information
.
End timing line of tSHQZ modified in Figure 25: Output timing.
01-Aug-2005
6.0
Updated Page Program (PP) instructions in Page Programming, Page Program
24-Oct-2005
7.0
). All packages are RoHS compliant. Blank option
MLP package renamed as VFQFPN, silhouette and package mechanical drawing
.
相關(guān)PDF資料
PDF描述
M25P40VMF6 4 Mbit Uniform Sector, Serial Flash Memory
M25P40VMF6G 4 Mbit Uniform Sector, Serial Flash Memory
M25P40VMF6P 4 Mbit Uniform Sector, Serial Flash Memory
M25P40VMF6T 4 Mbit Uniform Sector, Serial Flash Memory
M25P40VMF6TG 4 Mbit Uniform Sector, Serial Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M25P40VMN6TP 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface
M25P40-VMN6TP 功能描述:閃存 SERIAL SECTOR ERASE FLASH 4MEG RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M25P40-VMN6TP/X 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:4 Mbit, low voltage, serial Flash memory with 50 MHz SPI bus interface
M25P40-VMN6TP_NUD 制造商:Micron Technology Inc 功能描述:
M25P40-VMN6TPB 功能描述:IC FLASH 4MBIT 75MHZ 8SOIC RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:Forté™ 標準包裝:2,000 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 異步 存儲容量:256K (32K x 8) 速度:15ns 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:28-TSSOP（0.465"，11.8mm 寬） 供應(yīng)商設(shè)備封裝:28-TSOP 包裝:帶卷 (TR) 其它名稱:71V256SA15PZGI8
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*