參數(shù)資料
型號： M25P40-VMN6TG/X
廠商： NUMONYX
元件分類： PROM
英文描述： 512K X 8 SPI BUS SERIAL EEPROM, PDSO8
封裝： 0.150 INCH, ROHS COMPLIANT, PLASTIC, SOP-8
文件頁數(shù)： 26/57頁
文件大?。?/td> 1160K
代理商： M25P40-VMN6TG/X
Instructions
M25P40
32/57
6.11
Deep Power-down (DP)
Executing the Deep Power-down (DP) instruction is the only way to put the device in the
lowest consumption mode (the Deep Power-down mode). It can also be used as an extra
software protection mechanism, while the device is not in active use, since in this mode, the
device ignores all Write, Program and Erase instructions.
Driving Chip Select (S) High deselects the device, and puts the device in the Standby Power
mode (if there is no internal cycle currently in progress). But this mode is not the Deep
Power-down mode. The Deep Power-down mode can only be entered by executing the
Deep Power-down (DP) instruction, subsequently reducing the standby current (from ICC1 to
ICC2, as specified in Table 14).
Once the device has entered the Deep Power-down mode, all instructions are ignored
except the Release from Deep Power-down and Read Electronic Signature (RES)
instruction. This releases the device from this mode. The Release from Deep Power-down
and Read Electronic Signature (RES) instruction and the Read Identification (RDID)
instruction also allow the Electronic Signature of the device to be output on Serial Data
output (Q).
The Deep Power-down mode automatically stops at Power-down, and the device always
Powers-up in the Standby Power mode.
The Deep Power-down (DP) instruction is entered by driving Chip Select (S) Low, followed
by the instruction code on Serial Data input (D). Chip Select (S) must be driven Low for the
entire duration of the sequence.
The instruction sequence is shown in Figure 17.
Chip Select (S) must be driven High after the eighth bit of the instruction code has been
latched in, otherwise the Deep Power-down (DP) instruction is not executed. As soon as
Chip Select (S) is driven High, it requires a delay of tDP before the supply current is reduced
to ICC2 and the Deep Power-down mode is entered.
Any Deep Power-down (DP) instruction, while an Erase, Program or Write cycle is in
progress, is rejected without having any effects on the cycle that is in progress.
Figure 17.
Deep Power-down (DP) instruction sequence
C
D
AI03753D
S
2
1
34567
0
tDP
Deep Power-down Mode
Stand-by Mode
Instruction
相關(guān)PDF資料
PDF描述
M25P40VMF6 4 Mbit Uniform Sector, Serial Flash Memory
M25P40VMF6G 4 Mbit Uniform Sector, Serial Flash Memory
M25P40VMF6P 4 Mbit Uniform Sector, Serial Flash Memory
M25P40VMF6T 4 Mbit Uniform Sector, Serial Flash Memory
M25P40VMF6TG 4 Mbit Uniform Sector, Serial Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M25P40VMN6TP 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface
M25P40-VMN6TP 功能描述:閃存 SERIAL SECTOR ERASE FLASH 4MEG RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M25P40-VMN6TP/X 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:4 Mbit, low voltage, serial Flash memory with 50 MHz SPI bus interface
M25P40-VMN6TP_NUD 制造商:Micron Technology Inc 功能描述:
M25P40-VMN6TPB 功能描述:IC FLASH 4MBIT 75MHZ 8SOIC RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:Forté™ 標(biāo)準(zhǔn)包裝:2,000 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 異步 存儲容量:256K (32K x 8) 速度:15ns 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:28-TSSOP（0.465"，11.8mm 寬） 供應(yīng)商設(shè)備封裝:28-TSOP 包裝:帶卷 (TR) 其它名稱:71V256SA15PZGI8
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