參數(shù)資料
型號(hào)： M25P10-AVMB6T/X
廠商： NUMONYX
元件分類： PROM
英文描述： FLASH 2.7V PROM, DSO8
封裝： 2 X 3 MM, ROHS COMPLIANT, UFDFPN-8
文件頁(yè)數(shù)： 37/51頁(yè)
文件大?。?/td> 1103K
代理商： M25P10-AVMB6T/X
DC and AC parameters
M25P10-A
42/51
Table 20.
AC characteristics (50 MHz operation, device grade 6)
50 MHz available only in products with process technology code Y(1)(2)
Test conditions specified in Table 10 and Table 12
1. Details of how to find the process on the device marking are given in application note AN1995.
2. 50 MHz operation is also available in products with process technology code X, but with a reduced supply
voltage range (2.7 to 3.6 V).
Symbol
Alt.
Parameter
Min
Typ
Max
Unit
fC
Clock frequency(1) for the following instructions:
FAST_READ, PP, SE, BE, DP, RES, WREN, WRDI,
RDID, RDSR, WRSR
D.C.
50
MHz
fR
Clock frequency for READ instructions
D.C.
25
MHz
tCH(3)
3. tCH + tCL must be greater than or equal to 1/ fC.
tCLH Clock High time
9
ns
tCL(3)
tCLL Clock Low time
9
ns
tCLCH(4)
4. Value guaranteed by characterization, not 100% tested in production.
Clock Rise time(5) (peak to peak)
5. Expressed as a slew-rate.
0.1
V/ns
tCHCL(4)
Clock Fall time(5) (peak to peak)
0.1
V/ns
tSLCH
tCSS S Active Setup time (relative to C)
5
ns
tCHSL
S Not Active Hold time (relative to C)
5
ns
tDVCH
tDSU Data In Setup time
2
ns
tCHDX
tDH Data In Hold time
5
ns
tCHSH
S Active Hold time (relative to C)
5
ns
tSHCH
S Not Active Setup time (relative to C)
5
ns
tSHSL
tCSH S Deselect time
100
ns
tSHQZ(4)
tDIS Output Disable time
8
ns
tCLQV
tV
Clock Low to Output Valid
8
ns
tCLQX
tHO Output Hold time
0
ns
tHLCH
HOLD Setup time (relative to C)
5
ns
tCHHH
HOLD Hold time (relative to C)
5
ns
tHHCH
HOLD Setup time (relative to C)
5
ns
tCHHL
HOLD Hold time (relative to C)
5
ns
tHHQX(4)
tLZ
HOLD to Output Low-Z
8
ns
tHLQZ(4)
tHZ
HOLD to Output High-Z
8
ns
tWHSL(6)
6. Only applicable as a constraint for a WRSR instruction when SRWD is set at ‘1’.
Write Protect Setup time
20
ns
tSHWL(6)
Write Protect Hold time
100
ns
S High to Deep Power-down mode
3
μs
tRES1(4)
S High to Standby mode without Read Electronic
Signature
30
μs
tRES2(4)
S High to Standby mode with Read Electronic
Signature
30
μs
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參數(shù)描述
M25P10-AVME3 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface
M25P10-AVME3G 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface
M25P10-AVME3P 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface
M25P10-AVME3T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface
M25P10-AVME3TG 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface
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