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參數(shù)資料
| 型號： | M25P10-AVMB6T/X |
| 廠商： | NUMONYX |
| 元件分類： | PROM |
| 英文描述： | FLASH 2.7V PROM, DSO8 |
| 封裝： | 2 X 3 MM, ROHS COMPLIANT, UFDFPN-8 |
| 文件頁數(shù)： | 32/51頁 |
| 文件大?。?/td> | 1103K |
| 代理商： | M25P10-AVMB6T/X |
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DC and AC parameters
M25P10-A
38/51
Table 15.
DC characteristics (device grade 3)(1)
1. Only for products with process technology code X.
Symbol
Parameter
Test condition (in addition to
those in Table 10)
Min(2)
2. Preliminary data.
Unit
ILI
Input Leakage current
± 2
μA
ILO
Output Leakage current
± 2
μA
ICC1
Standby current
S = VCC, VIN = VSS or VCC
100
μA
ICC2
Deep Power-down current
S = VCC, VIN = VSS or VCC
50
μA
ICC3
Operating current (READ)
C = 0.1VCC / 0.9.VCC at 25 MHz,
Q = open
8mA
C = 0.1VCC / 0.9.VCC at 20 MHz,
Q = open
4mA
ICC4
Operating current (PP)
S = VCC
15
mA
ICC5
Operating current (WRSR)
S = VCC
15
mA
ICC6
Operating current (SE)
S = VCC
15
mA
ICC7
Operating current (BE)
S = VCC
15
mA
VIL
Input Low voltage
–0.5
0.3VCC
V
VIH
Input High voltage
0.7VCC VCC+0.4
V
VOL
Output Low voltage
IOL = 1.6 mA
0.4
V
VOH
Output High voltage
IOH = –100 μAVCC–0.2
V
Table 16.
Instruction times (device grade 6)
Symbol
Alt.
Parameter
Min
Typ
Max
Unit
tW
Write Status Register cycle time
5
15
ms
tPP(1)
1. When using the Page Program (PP) instruction to program consecutive bytes, optimized timings are
obtained with one sequence including all the bytes versus several sequences of only a few bytes. (1
≤ n ≤
256).
Page Program cycle time (256 bytes)
1.4
5ms
Page Program cycle time (n bytes)
0.4+
n*1/256(2)
2. tPP=2μs+8μs*[int(n-1)/2+1]+4μs*[int(n-1)/2]+2μs, in products with process technology code X and Y.
tSE
Sector Erase cycle time
0.65
3
s
tBE
Bulk Erase cycle time
1.7
6
s
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PDF描述 |
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| M25P10-AVME3 | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P10-AVME3G | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P10-AVME3P | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P10-AVME3T | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P10-AVME3TG | 4 Mbit Uniform Sector, Serial Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M25P10-AVME3 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface |
| M25P10-AVME3G | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface |
| M25P10-AVME3P | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface |
| M25P10-AVME3T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface |
| M25P10-AVME3TG | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface |
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