2-78 Revision 13 1.2 V DC Core Voltage Table 2-131 Input DDR Propagation Delays
參數(shù)資料
型號: M1AGLE3000V2-FGG896I
廠商: Microsemi SoC
文件頁數(shù): 159/166頁
文件大?。?/td> 0K
描述: IC FPGA 1KB FLASH 3M 896-FBGA
標(biāo)準(zhǔn)包裝: 27
系列: IGLOOe
邏輯元件/單元數(shù): 75264
RAM 位總計: 516096
輸入/輸出數(shù): 620
門數(shù): 3000000
電源電壓: 1.14 V ~ 1.575 V
安裝類型: 表面貼裝
工作溫度: -40°C ~ 85°C
封裝/外殼: 896-BGA
供應(yīng)商設(shè)備封裝: 896-FBGA(31x31)
IGLOOe DC and Switching Characteristics
2-78
Revision 13
1.2 V DC Core Voltage
Table 2-131 Input DDR Propagation Delays
Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.14 V
Parameter
Description
Std.
Units
tDDRICLKQ1
Clock-to-Out Out_QR for Input DDR
0.76
ns
tDDRICLKQ2
Clock-to-Out Out_QF for Input DDR
0.94
ns
tDDRISUD1
Data Setup for Input DDR (negedge)
0.93
ns
tDDRISUD2
Data Setup for Input DDR (posedge)
0.84
ns
tDDRIHD1
Data Hold for Input DDR (negedge)
0.00
ns
tDDRIHD2
Data Hold for Input DDR (posedge)
0.00
ns
tDDRICLR2Q1
Asynchronous Clear to Out Out_QR for Input DDR
1.23
ns
tDDRICLR2Q2
Asynchronous Clear-to-Out Out_QF for Input DDR
1.42
ns
tDDRIREMCLR
Asynchronous Clear Removal Time for Input DDR
0.00
ns
tDDRIRECCLR
Asynchronous Clear Recovery Time for Input DDR
0.24
ns
tDDRIWCLR
Asynchronous Clear Minimum Pulse Width for Input DDR
0.19
ns
tDDRICKMPWH
Clock Minimum Pulse Width HIGH for Input DDR
0.31
ns
tDDRICKMPWL
Clock Minimum Pulse Width LOW for Input DDR
0.28
ns
FDDRIMAX
Maximum Frequency for Input DDR
160.00
MHz
Note: For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-6 for derating values.
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