參數(shù)資料
型號(hào): M13S256328A
廠商: Elite Semiconductor Memory Technology Inc.
英文描述: 2M x 32 Bit x 4 Banks Double Data Rate SDRAM
中文描述: 200萬(wàn)× 32位× 4個(gè)銀行雙倍數(shù)據(jù)速率SDRAM
文件頁(yè)數(shù): 6/47頁(yè)
文件大小: 807K
代理商: M13S256328A
ES MT
M13S256328A
Elite Semiconductor Memory Technology Inc.
Publication Date : May. 2007
Revision : 1.2 6/47
AC Operating Test Conditions
Parameter
Value
Unit
Input reference voltage for clock (V
REF
)
0.5*V
DDQ
V
Input signal maximum peak swing
1.5
V
Input signal minimum slew rate
1.0
V/ns
Input levels (V
IH
/V
IL
)
V
REF
+0.35/V
REF
-0.35
V
Input timing measurement reference level
V
REF
V
Output timing reference level
V
TT
V
AC Timing Parameter & Specifications
(V
DD
= 2.3V~2.7V, V
DDQ
=2.3V~2.7V, T
A
=0
C
°
to 70
C
°
)(Note)
-5
Parameter
Symbol
min
max
CL2
7.5
15
CL2.5
5.0
10
Clock Period
CL3
t
CK
5.0
10
ns
Access time from CLK/CLK
t
AC
-0.65
+0.65
ns
CLK high-level width
t
CH
0.45
0.55
t
CK
CLK low-level width
t
CL
0.45
0.55
t
CK
Data strobe edge to clock edge
t
DQSCK
-0.65
+0.65
ns
Clock to first rising edge of DQS delay
t
DQSS
0.85
1.15
t
CK
Data-in and DM setup time (to DQS)
t
DS
0.5
-
ns
Data-in and DM hold time (to DQS)
t
DH
0.5
-
ns
DQ and DM input pulse width (for each input)
t
DIPW
1.75
-
ns
Input setup time
t
IS
1.0
-
ns
Input hold time
t
IH
1.0
-
ns
Control and Address input pulse width
t
IPW
2.2
-
ns
DQS input high pulse width
t
DQSH
0.4
0.6
t
CK
DQS input low pulse width
t
DQSL
0.4
0.6
t
CK
DQS falling edge to CLK rising-setup time
t
DSS
0.2
-
t
CK
DQS falling edge from CLK rising-hold time
t
DSH
0.2
-
t
CK
Data strobe edge to output data edge
t
DQSQ
-
0.4
ns
Data-out high-impedance window from
CLK/
CLK
t
HZ
-
+0.7
ns
Data-out low-impedance window from
CLK/CLK
t
LZ
-0.7
+0.7
ns
相關(guān)PDF資料
PDF描述
M13S32321A 256K x 32 Bit x 4 Banks Double Data Rate SDRAM
M13S64164A-6BG 1M x 16 Bit x 4 Banks Double Data Rate SDRAM
M13S64164A 1M x 16 Bit x 4 Banks Double Data Rate SDRAM
M13S64164A-5BG 1M x 16 Bit x 4 Banks Double Data Rate SDRAM
M13S64164A-5TG 1M x 16 Bit x 4 Banks Double Data Rate SDRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M13S256328A-5BG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:2M x 32 Bit x 4 Banks Double Data Rate SDRAM
M13S32321A 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:256K x 32 Bit x 4 Banks Double Data Rate SDRAM
M13S32321A_08 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:256K x 32 Bit x 4 Banks Double Data Rate SDRAM
M13S32321A-5L 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:256K x 32 Bit x 4 Banks Double Data Rate SDRAM
M13S32321A-6L 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:256K x 32 Bit x 4 Banks Double Data Rate SDRAM